Document
TO-220 3A Thyristor
TF321M / TF341M / TF361M
s Features
qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max
External Dimensions
(Unit: mm)
16.7max 3.0±0.2 8.8±0.2 10.4max
5.0max 2.1max
φ 3.75±0.1
a b
±0.15 1.35
12.0 min
4.0 max
+0.2 0.65 – 0.1 ±0.1 2.5
(1). Cathode (K) (2). Anode (A) (3). Gate (G)
±0.1 2.5
± 1.7 0.2
a. Part Number b. Lot Number
(1) (2) (3)
Weight: Approx. 2.6g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature
Symbol
VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg
Ratings
TF321M 200 200 300 300 TF341M 400 400 500 500 3.0 4.7 60 2.0 10 5.0 5.0 0.5 –40 to +125 –40 to +125 TF361M 600 600 700 700
Unit
V V V V A A A A V V W W °C °C
Conditions
Tj= –40 to +125°C, RGK =1kΩ
50Hz Half-cycle sinewave, Continuous current, Tc=102°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10%
sElectrical Characteristics
Parameter
Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance
Symbol
IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth
Ratings
min typ max 2.0 2.0 1.4 1.5 2.0 0.1 4.0 50 30 3.0 10
Unit
mA mA V V mA V mA V/µS µS °C/W
Conditions
Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=5A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case
6
TF321M / TF341M / TF361M
vT – iT Characteristics (max)
100 Surge on-state current ITSM (A) 50 Tj =125°C 10 5 Tj = 25°C
ITSM Ratings
100
Initial junction temperature Tj=125°C ITSM 10 ms 1cycle
Gate Characteristics
Gate trigger voltage VGT (V)
12 10
iT (A)
vGF (V)
80
1
On-state current
8 6 4
Gate voltage
60
0 0 10 20 30 Gate trigger current IGT (mA)
40
1 0.5 0.3 1.0 2.0 On-state voltage 3.0 4.0
20
2 See graph at the upper right 0 0
0 1
5
10
50
100
1 Gate current
2
Tj =25°C
Tj = –20°C
Tj = –40°C
2
P GM = 5W
3
vT ( V )
Number of cycle
iGF (A)
IT(AV) – PT(AV) Characteristics
Average on-state power PT(AV) (W)
0° 18
IT(AV) – Tc Ratings
150
50Hz Half-cycle sinewave θ: Conduction angle 180° θ 0°
6 5 4
0° DC
50Hz Half-cycle sinewave θ: Conduction angle 0° θ 180°
0° 15
125
Case temperature TC (°C)
12
60
°
90
100
DC
°
θ=
3 2 1 0 0
30 °
75 50 25 0
1
2
3
4
5
0
Average on-state current IT(AV) (A)
1 2 3 4 Average on-state current IT(AV) (A)
θ=30°
120° 150°
180°
60°
90°
5
Pulse trigger temperature C.