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TF341 Dataheets PDF



Part Number TF341
Manufacturers Sanken electric
Logo Sanken electric
Description TO-220 3A Thyristor
Datasheet TF341 DatasheetTF341 Datasheet (PDF)

TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max External Dimensions (Unit: mm) 16.7max 3.0±0.2 8.8±0.2 10.4max 5.0max 2.1max φ 3.75±0.1 a b ±0.15 1.35 12.0 min 4.0 max +0.2 0.65 – 0.1 ±0.1 2.5 (1). Cathode (K) (2). Anode (A) (3). Gate (G) ±0.1 2.5 ± 1.7 0.2 a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.6g sAbsolute Maximum Ratings Para.

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TO-220 3A Thyristor TF321M / TF341M / TF361M s Features qRepetitive peak off-state voltage: VDRM=200, 400, 600V qAverage on-state current: IT(AV)=3A qGate trigger current: IGT=10mA max External Dimensions (Unit: mm) 16.7max 3.0±0.2 8.8±0.2 10.4max 5.0max 2.1max φ 3.75±0.1 a b ±0.15 1.35 12.0 min 4.0 max +0.2 0.65 – 0.1 ±0.1 2.5 (1). Cathode (K) (2). Anode (A) (3). Gate (G) ±0.1 2.5 ± 1.7 0.2 a. Part Number b. Lot Number (1) (2) (3) Weight: Approx. 2.6g sAbsolute Maximum Ratings Parameter Repetitive peak off-state voltage Repetitive peak reverse voltage Non-repetitive peak off-state voltage Non-repetitive peak reverse voltage Average on-state current RMS on-state current Surge on-state current Peak forward gate current Peak forward gate voltage Peak reverse gate voltage Peak gate power loss Average gate power loss Junction temperature Storage temperature Symbol VDRM VRRM VDSM VRSM IT(AV) IT(RMS) ITSM IFGM VFGM VRGM PGM PG(AV) Tj Tstg Ratings TF321M 200 200 300 300 TF341M 400 400 500 500 3.0 4.7 60 2.0 10 5.0 5.0 0.5 –40 to +125 –40 to +125 TF361M 600 600 700 700 Unit V V V V A A A A V V W W °C °C Conditions Tj= –40 to +125°C, RGK =1kΩ 50Hz Half-cycle sinewave, Continuous current, Tc=102°C 50Hz Half-cycle sinewave, Single shot, Non-repetitive, Tj=125°C f f f 50Hz, duty 50Hz 50Hz, duty 10% 10% sElectrical Characteristics Parameter Off-state current Reverse current On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Critical rate-of-rise of off-state voltage Turn-off time Thermal resistance Symbol IDRM IRRM VTM VGT IGT VGD IH dv/dt tq Rth Ratings min typ max 2.0 2.0 1.4 1.5 2.0 0.1 4.0 50 30 3.0 10 Unit mA mA V V mA V mA V/µS µS °C/W Conditions Tj=125°C, VD=VDRM(VRRM), RGK=1kΩ TC=25°C, ITM=5A VD=6V, RL=10Ω, TC=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ RGK=1kΩ, Tj=25°C VD=1/2 × VDRM, Tj=125°C, RGK=1kΩ, CGK=0.033µF Tc=25°C Junction to case 6 TF321M / TF341M / TF361M vT – iT Characteristics (max) 100 Surge on-state current ITSM (A) 50 Tj =125°C 10 5 Tj = 25°C ITSM Ratings 100 Initial junction temperature Tj=125°C ITSM 10 ms 1cycle Gate Characteristics Gate trigger voltage VGT (V) 12 10 iT (A) vGF (V) 80 1 On-state current 8 6 4 Gate voltage 60 0 0 10 20 30 Gate trigger current IGT (mA) 40 1 0.5 0.3 1.0 2.0 On-state voltage 3.0 4.0 20 2 See graph at the upper right 0 0 0 1 5 10 50 100 1 Gate current 2 Tj =25°C Tj = –20°C Tj = –40°C 2 P GM = 5W 3 vT ( V ) Number of cycle iGF (A) IT(AV) – PT(AV) Characteristics Average on-state power PT(AV) (W) 0° 18 IT(AV) – Tc Ratings 150 50Hz Half-cycle sinewave θ: Conduction angle 180° θ 0° 6 5 4 0° DC 50Hz Half-cycle sinewave θ: Conduction angle 0° θ 180° 0° 15 125 Case temperature TC (°C) 12 60 ° 90 100 DC ° θ= 3 2 1 0 0 30 ° 75 50 25 0 1 2 3 4 5 0 Average on-state current IT(AV) (A) 1 2 3 4 Average on-state current IT(AV) (A) θ=30° 120° 150° 180° 60° 90° 5 Pulse trigger temperature C.


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