Document
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
Rev. 03 — 26 March 2007
Product data sheet
1. General description
The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier.
To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers.
The circuit is very flexible and enables a broad range of applications for different mains voltages.
VDD TEA1610
VHS
bridge voltage supply (high side)
MOSFET SWITCH
HALFBRIDGE CIRCUIT
RESONANT CONVERTER
signal ground
Fig 1. Basic configuration
power ground
mgu336
2. Features
I Integrated high voltage level-shift function
I Integrated high voltage bootstrap diode
I Low start-up current (green function)
I Adjustable dead time
I Transconductance error amplifier for ultra high-ohmic regulation feedback
I Latched shut-down circuit for overcurrent and overvoltage protection
I Adjustable minimum and maximum frequencies
I Undervoltage lockout
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
3. Applications
I TV and monitor power supplies
I High voltage power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
VHS IGH(source)
high side driver voltage
high side output source current
IGL(source)
low side output source current
VDD(F) = 13 V; VSH = 0 V; VGH = 0 V
VGL = 0 V
IGH(sink)
IGL(sink) fbridge(max)
high side output sink current
VDD(F) = 13 V; VSH = 0 V; VGH = 13 V
low side output sink current VGL = 14 V
maximum bridge frequency CF = 100 pF; IIFS = 1 mA; IIRS = 200 µA;
fbridge
=
-f---O----S---C2
Min 0 −135
−135 -
[1] 450
Typ −180
−180 300
300 500
Max 600 −225
−225 -
550
Unit V mA
mA mA
mA kHz
VI(CM)
common mode input voltage
[2] - - 2.5 V
[1] The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF, and the charge/discharge currents ICF(ch) and ICF(dis).
[2] This parameter applies specifically to the error amplifier.
5. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
TEA1610P
DIP16
plastic dual in-line package; 16 leads (300 mil); long body
TEA1610T
SO16
plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height
Version SOT38-1 SOT109-2
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
2 of 21
NXP Semiconductors
6. Block diagram
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
VDD 11
SUPPLY
BOOTSTRAP
TEA1610
reset
LEVEL SHIFTER
9 SGND
start/stop oscillation shut-down
start-up
LOGIC ÷2
HIGH SIDE DRIVER
LOW SIDE DRIVER
8 VDD(F)
7 GH 6
SH
10 GL
4 PGND
15 SD
2.33 V
I+ 2
I− 1
gm
ERROR
AMPLIFIER
2.5 V
5
n.c.
Fig 2. Block diagram
× 2 Icharge OSCILLATOR
3V 3 14 VCO IRS
0.6 V 16 12
VREF IFS
Idischarge
13
CF
mgu337
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
3 of 21
NXP Semiconductors
7. Pinning information
7.1 Pinning
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
I− 1 I+ 2
16 VREF 15 SD
VCO 3
14 IRS
PGND 4
13 CF
TEA1610P
n.c. 5
12 IFS
SH 6 GH 7
11 VDD 10 GL
VDD(F) 8
9 SGND
001aaf866
Fig 3. Pin configuration for TEA1610P
I− 1 I+ 2 VCO 3 PGND 4 n.c. 5 SH 6 GH 7 VDD(F) 8
16 VREF 15 SD
14 IRS
13 CF TEA1610T
12 IFS
11 VDD 10 GL
9 SGND 001aaf867
Fig 4. Pin configuration for TEA1610T
7.2 Pin description
Table 3. Symbol II+ VCO PGND n.c. SH GH VDD(F) SGND GL VDD IFS CF IRS SD VREF
Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Description error amplifier inverting input error amplifier non-inverting input error amplifier output power ground not connected (high voltage spacer) high side switch source gate of the high side switch floating supply voltage for the high side driver signal ground gate of the low side switch supply voltage oscillator discharge current input oscillator capacitor oscillator charge current input shut-down input reference voltage
TEA1610T_P_3
Product data sheet
Rev. 03 — 26 March 2007
© NXP B.V. 2007. All rights reserved.
4 of 21
NXP Semiconductors
TEA1610P; TEA1610T
Zero-voltage-switching resonant converter controller
8. Functional description
8.1 Start-up
When the applied voltage at VDD reaches VDD(initial) (see Figure 5), the low side power switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the boot.