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TEA1610P Dataheets PDF



Part Number TEA1610P
Manufacturers NXP
Logo NXP
Description Zero-voltage-switching resonant converter controller
Datasheet TEA1610P DatasheetTEA1610P Datasheet (PDF)

TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 Product data sheet 1. General description The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an.

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TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller Rev. 03 — 26 March 2007 Product data sheet 1. General description The TEA1610 is a monolithic integrated circuit implemented in a high-voltage Diffusion Metal Oxide Semiconductor (DMOS) process. The circuit is a high voltage controller for a zero-voltage switching resonant converter. The IC provides the drive function for two discrete power MOSFETs in a half-bridge configuration. It also includes a level-shift circuit, an oscillator with accurately-programmable frequency range, a latched shut-down function and a transconductance error amplifier. To guarantee an accurate 50 % switching duty factor, the oscillator signal passes through a divide-by-two flip-flop before being fed to the output drivers. The circuit is very flexible and enables a broad range of applications for different mains voltages. VDD TEA1610 VHS bridge voltage supply (high side) MOSFET SWITCH HALFBRIDGE CIRCUIT RESONANT CONVERTER signal ground Fig 1. Basic configuration power ground mgu336 2. Features I Integrated high voltage level-shift function I Integrated high voltage bootstrap diode I Low start-up current (green function) I Adjustable dead time I Transconductance error amplifier for ultra high-ohmic regulation feedback I Latched shut-down circuit for overcurrent and overvoltage protection I Adjustable minimum and maximum frequencies I Undervoltage lockout NXP Semiconductors TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller 3. Applications I TV and monitor power supplies I High voltage power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VHS IGH(source) high side driver voltage high side output source current IGL(source) low side output source current VDD(F) = 13 V; VSH = 0 V; VGH = 0 V VGL = 0 V IGH(sink) IGL(sink) fbridge(max) high side output sink current VDD(F) = 13 V; VSH = 0 V; VGH = 13 V low side output sink current VGL = 14 V maximum bridge frequency CF = 100 pF; IIFS = 1 mA; IIRS = 200 µA; fbridge = -f---O----S---C2 Min 0 −135 −135 - [1] 450 Typ −180 −180 300 300 500 Max 600 −225 −225 - 550 Unit V mA mA mA mA kHz VI(CM) common mode input voltage [2] - - 2.5 V [1] The frequency of the oscillator depends on the value of capacitor Cf, the peak-to-peak voltage swing VCF, and the charge/discharge currents ICF(ch) and ICF(dis). [2] This parameter applies specifically to the error amplifier. 5. Ordering information Table 2. Ordering information Type number Package Name Description TEA1610P DIP16 plastic dual in-line package; 16 leads (300 mil); long body TEA1610T SO16 plastic small outline package; 16 leads; body width 3.9 mm; low stand-off height Version SOT38-1 SOT109-2 TEA1610T_P_3 Product data sheet Rev. 03 — 26 March 2007 © NXP B.V. 2007. All rights reserved. 2 of 21 NXP Semiconductors 6. Block diagram TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller VDD 11 SUPPLY BOOTSTRAP TEA1610 reset LEVEL SHIFTER 9 SGND start/stop oscillation shut-down start-up LOGIC ÷2 HIGH SIDE DRIVER LOW SIDE DRIVER 8 VDD(F) 7 GH 6 SH 10 GL 4 PGND 15 SD 2.33 V I+ 2 I− 1 gm ERROR AMPLIFIER 2.5 V 5 n.c. Fig 2. Block diagram × 2 Icharge OSCILLATOR 3V 3 14 VCO IRS 0.6 V 16 12 VREF IFS Idischarge 13 CF mgu337 TEA1610T_P_3 Product data sheet Rev. 03 — 26 March 2007 © NXP B.V. 2007. All rights reserved. 3 of 21 NXP Semiconductors 7. Pinning information 7.1 Pinning TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller I− 1 I+ 2 16 VREF 15 SD VCO 3 14 IRS PGND 4 13 CF TEA1610P n.c. 5 12 IFS SH 6 GH 7 11 VDD 10 GL VDD(F) 8 9 SGND 001aaf866 Fig 3. Pin configuration for TEA1610P I− 1 I+ 2 VCO 3 PGND 4 n.c. 5 SH 6 GH 7 VDD(F) 8 16 VREF 15 SD 14 IRS 13 CF TEA1610T 12 IFS 11 VDD 10 GL 9 SGND 001aaf867 Fig 4. Pin configuration for TEA1610T 7.2 Pin description Table 3. Symbol II+ VCO PGND n.c. SH GH VDD(F) SGND GL VDD IFS CF IRS SD VREF Pin description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Description error amplifier inverting input error amplifier non-inverting input error amplifier output power ground not connected (high voltage spacer) high side switch source gate of the high side switch floating supply voltage for the high side driver signal ground gate of the low side switch supply voltage oscillator discharge current input oscillator capacitor oscillator charge current input shut-down input reference voltage TEA1610T_P_3 Product data sheet Rev. 03 — 26 March 2007 © NXP B.V. 2007. All rights reserved. 4 of 21 NXP Semiconductors TEA1610P; TEA1610T Zero-voltage-switching resonant converter controller 8. Functional description 8.1 Start-up When the applied voltage at VDD reaches VDD(initial) (see Figure 5), the low side power switch is turned-on while the high side power switch remains in the non-conducting state. This start-up output state guarantees the initial charging of the boot.


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