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TDS595 Dataheets PDF



Part Number TDS595
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS
Datasheet TDS595 DatasheetTDS595 Datasheet (PDF)

SD1732 (TDS595) RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 14.0 W MIN. WITH 8.5 dB GAIN .250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1732 BRANDING TDS595 PIN CONNECTION DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN.

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SD1732 (TDS595) RF & MICROWAVE TRANSISTORS TV LINEAR APPLICATIONS . . . . . . . . . . 470 - 860 MHz 25 VOLTS CLASS A PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST RESISTORS COMMON EMITTER CONFIGURATION INTERNAL INPUT MATCHING P OUT = 14.0 W MIN. WITH 8.5 dB GAIN .250 x .320 4LFL (M156) epoxy sealed ORDER CODE SD1732 BRANDING TDS595 PIN CONNECTION DESCRIPTION The SD1732 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class A operation in UHF and Band IV, V television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 25 4.0 2 x 2.6 65 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 2.5 °C/W 1/6 SD1732 (TDS595) ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCEO BVEBO hFE IC = 20mA IC = 40mA IE = 5mA VCE = 20V IE = 0mA IB = 0mA IC = 0mA IC = 0.5A 45 25 3.0 10 — — — — — — — — V V V — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP IMD3* CMD** COB Note: f = 845 MHz POUT = 14 W POUT = 14 W POUT = 14 W f = 1 MHz − 8 dB ref − 7 dB ref Carrier − 16 dB ref VCE = 25 V VCE = 25 V VCE = 25 V VCE = 25 V VCB = 25 V ICQ = 2 x 850 mA ICQ = 2 x 850 mA ICQ = 2 x 850 mA ICQ = 2 x 850 mA 14 8.5 — — — — — −47 20 — — — — — 20 W dB dBc % pF *IMD 3 Tone Testing Visi on Carrier Sound Carrier Sideband ** CMD: Cross Modulat ion Di stortion of the Voltage Variation (%) of S ound Carrier When Vision Carrier is Switched from 0 to −20 dB 2/6 SD1732 (TDS595) TYPICAL PERFORMANCE INTERMODULATION DISTORTION & CROSS MODULATION DISTORTION vs POWER OUTPUT POWER OUTPUT vs POWER INPUT BROADBAND POWER GAIN vs FREQUENCY THERMAL RESISTANCE vs CASE TEMPERATURE SAFE OPERATING AREA 3/6 SD1732 (TDS595) TEST CIRCUIT C1, C’1, C13, C’13 : C2 : C3 : C4, C’4, C6, C10, C’10 : C5, C’5 : C7, C’7 : C8, C’8 : C11 : C12 : C14, C’14 : 68pF, ATC 100A 4.5pF Adjustable Johanson 4.7pF, ATC 100A C’6, C9, C’9, 100pF, ATC 100A + 1nF LCC Chip + 10nF LCC Chip 4.7µF, 25V, Tantalum Capacitor 10µF, 25V, Tantalum Capacitor 22µF, 35V, Tantalum Capacitor 4.7pf, ATC 100A 8pF Adjustable Johanson 22pF, ATC 100A L3, L’3 L4, L’4 L5, L’5 L6, L’6 L7, L’7 L8, L’8 : : : : : : 50Ω 50Ω 39Ω 39Ω 39Ω 39Ω Printed Transmission Line Length 3mm Printed Transmission Line Length 9.5mm Printed Transmission Line Length 7mm Printed Transmission Line Length 15mm Printed Transmission Line Length 8mm Printed Transmission Line Length 10mm R1, R’1 : 4.7Ω , 1/2W R2, R’2 : 1207Ω, 1/2W S1, S’1 : 470nH Molded S2, S’2 : 5 Turns, Diameter Wire 0.5mm on 3mm I.D. S3, S’3 : Diameter Wire 1.2mm, Length 12mm Substrate: Teflon Glass 30Mils, Er = 2.55 L1, L9, L’9 : 50Ω Coaxial Wire Diameter 2.2mm, Length 29mm on 70Ω Transmission Line L2, L’2 : 50Ω Printed Transmission Line Length 4mm 4/6 SD1732 (TDS595) SUPPLY CIRCUIT - CLASS A ADJUSTABLE (per side) C1, C2, C4, C5, C6 : 1nF LCC Chip + 10nF LCC Chip C3 : 100µF Sprague C7 : 10 µF Sprague D1 L1, L2 : 1N 4001 : 5 Turns, 0.5mmWire on 3mm Internal Diameter P1 R1 R2 R3 R4, R5 T1 : 1kΩ : : : : 56Ω, 1/2W 5600Ω , 1/2W 2.2Ω , 3W 56Ω, 1W : BDX 54 B PHOTOMASTER OF TEST CIRCUIT 5/6 SD1732 (TDS595) PACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0156 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 6/6 .


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