TISP4180F3

TISP4125F3, TISP4150F3, TISP4180F3 SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK MARCH 1994 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘4125F3 ‘4150F3 ‘4180F3 VDRM V 100 120 145 V(BO) V 125 150 180 D PACKAGE (TOP VIEW) T T T T 1 2 3 4 8 7 6 5 R R R R MDXXAI Specified ratings require the connection of pins 1, 2, 3 and 4 for the T terminal. SL PACKAGE (TOP VIEW) q Planar Passivated Junctions Low Off-State Current < 10 µA Rated for International Surge Wave Shapes WAVE SHAPE 2/10 µs 8/20 µs 10/160 µs 10/560 µs 0.5/700 µs 10/700 µs 10/1000 µs STANDARD FCC Part 68 ANSI C62.41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 175 120 60 45 38 50 50 50 35 4 T 3 q T 1 R 2 MDXXAH MD4XAA device symbol D PACKAGE T 2 T 1 T 1 SL PACKAGE T q Surface Mount and Through-Hole Options PACKAGE Small-outline Small-outline taped and reeled Single-in-line PART # SUFFIX D DR SL 5 R 6 R 7 R 8 R 2 R SD4XAE Terminals T and R correspond to the alternative line designators of A and B q UL Recognized, E132482 high crowbar holding current prevents d.c. latchup as the current subsides. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation The sm...