TISP2180

TISP2180 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS Copyright © 1997, Power Innovations Limited, UK NOVEMBER 1986 - REVISED SEPTEMBER 1997 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION q Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge DEVICE ‘2180 V(Z) V 145 V(BO) V 180 TO-220 PACKAGE (TOP VIEW) A(T) C(G) B(R) 1 2 3 q Planar Passivated Junctions Low Off-State Current < 10 µA Rated for International Surge Wave Shapes WAVE SHAPE 8/20 µs 10/160 µs 10/560 µs 0.2/310 µs 10/700 µs 10/1000 µs STANDARD ANSI C62.41 FCC Part 68 FCC Part 68 RLM 88 FTZ R12 VDE 0433 CCITT IX K17/K20 REA PE-60 ITSP A 150 60 45 38 50 50 50 50 Pin 2 is in electrical contact with the mounting base. MDXXANA q device symbol q UL Recognized, E132482 description The TISP2180 is designed specifically for telephone equipment protection against lightning and transients induced by a.c. power lines. These devices will supress voltage transients between terminals A and C, B and C, and A and B. Transients are initially clipped by zener action until the voltage rises to the breakover level, which causes the device to crowbar. The high crowbar holding current prevents d.c. latchup as the transient subsides. These monolithic protection devices are fabricated in ion-implanted planar structures to ensure precise and matched breakover control and are virtually transparent to the system in normal operation. PRODUCT INFORMATION Information is current as of publica...