Document
TIS98
Discrete POWER & Signal Technologies
TIS98
E
BC
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60 80 6.0 500 -55 to +150
Units
V V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TIS98 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
© 1997 Fairchild Semiconductor Corporation
TIS98
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO I CBO I EBO Collector-Emitter Breakdown Voltage* Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, I B = 0 VCB = 40 V, IE = 0 VCB = 80 V, IE = 0 VEB = 6.0 V, I C = 0 60 10 10 20 V nA µA nA
ON CHARACTERISTICS*
hFE VCE( sat) VBE( on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 5.0 V, I C = 1.0 mA IC = 10 mA, IB = 0.1 mA IC = 100 mA, I B = 5.0 mA IC = 1.0 mA, VCE = 5.0 V 100 300 1.0 0.5 0.7 V V V
0.5
SMALL SIGNAL CHARACTERISTICS
Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz I C = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz I C = 10 mA, VCE = 5.0 V, f = 100 MHz I C = 1.0 mA, VCE = 5.0 V, f = 100 MHz 100 2.0 30 1.0 4.0 16 400 pF pF
yfe
Forward Trans-conductance
mmhos
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
.