N-Channel MOSFET
TIS73 / TIS74
TIS73 TIS74
G
S
TO-92
D
N-Channel General Purpose Amplifier
This device is designed for low level ana...
Description
TIS73 / TIS74
TIS73 TIS74
G
S
TO-92
D
N-Channel General Purpose Amplifier
This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54.
Absolute Maximum Ratings*
Symbol
VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current
TA = 25°C unless otherwise noted
Parameter
Value
30 - 30 10 -55 to +150
Units
V V mA °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TIS73 / TIS74 625 5.0 83.3 200
Units
mW mW/ °C °C/W °C/W
©1997 Fairchild Semiconductor Corporation
TIS73 / TIS74
N-Channel General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)GSS IGSS ID( off) VGS( off) Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Gate-Source Cutoff Voltage I G = 1.0 µ A, VDS = 0 VGS = 15 V, VD...
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