TIS73

TIS73 / TIS74 TIS73 TIS74 G S TO-92 D N-Channel General Purpose Amplifier This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 54. Absolute Maximum Ratings* Symbol VDG VGS IGF TJ, Tstg Drain-Gate Voltage Gate-Source Voltage Forward Gate Current TA = 25°C unless otherwise noted Parameter Value 30 - 30 10 -55 to +150 Units V V mA °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max TIS73 / TIS74 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W ©1997 Fairchild Semiconductor Corporation TIS73 / TIS74 N-Channel General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)GSS IGSS ID( off) VGS( off) Gate-Source Breakdown Voltage Gate Reverse Current Drain Cutoff Leakage Current Gate-Source Cutoff Voltage I G = 1.0 µ A, VDS = 0 VGS = 15 V, VD...