TIPP110

TIPP110, TIPP111, TIPP112 NPN SILICON POWER DARLINGTONS Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q q 20 W Pulsed Power Dissipation 100 V Capability 2 A Continuous Collector Current 4 A Peak Collector Current E C B LP PACKAGE (TOP VIEW) 1 2 3 MDTRAB absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIPP110 Collector-base voltage (IE = 0) TIPP111 TIPP112 TIPP110 Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Pulsed power dissipation (see Note 3) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. VCE = 20 V, IC = 1 A, PW = 10 ms, duty cycle ≤ 2%. TIPP111 TIPP112 V EBO IC ICM IB Ptot PT Tj Tstg TL VCEO VCBO SYMBOL VALUE 60 80 100 60 80 100 5 2 4 50 0.8 20 -55 to +150 -55 to +150 260 V A A mA W W °C °C °C V V UNIT PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIPP110, TIPP111, TIPP112 NPN SILICON POWER DARLINGTONS MAY 1989 - REVIS...