TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MA...
TIPL761, TIPL761A
NPN SILICON POWER
TRANSISTORS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1978 - REVISED MARCH 1997
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Rugged Triple-Diffused Planar Construction 4 A Continuous Collector Current Operating Characteristics Fully Guaranteed at 100°C 1000 Volt Blocking Capability 100 W at 25°C Case Temperature
E
3 Pin 2 is in electrical contact with the mounting base.
MDTRAA
SOT-93 PACKAGE (TOP VIEW)
B
1
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C
2
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING Collector-base voltage (IE = 0) Collector-emitter voltage (V BE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous device dissipation at (or below) 25°C case temperature Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 10 ms, duty cycle ≤ 2%. TIPL761 TIPL761A TIPL761 TIPL761A TIPL761 TIPL761A SYMBOL VCBO VCES VCEO V EBO IC ICM Ptot Tj Tstg VALUE 850 1000 850 1000 400 450 10 4 8 100 -65 to +150 -65 to +150 UNIT V V V V A A W °C °C
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters.
1
TIPL761, TIPL761A
NPN SILICON POWER
TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise not...