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TIP47 Dataheets PDF



Part Number TIP47
Manufacturers Power Innovations Limited
Logo Power Innovations Limited
Description NPN SILICON POWER TRANSISTORS
Datasheet TIP47 DatasheetTIP47 Datasheet (PDF)

TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q 40 W at 25°C Case Temperature 1 A Continuous Collector Current 2 A Peak Collector Current 20 mJ Reverse-Energy Rating B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP47 Collector-base voltage (IE = 0) TIP48 TIP.

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TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK DECEMBER 1971 - REVISED MARCH 1997 q q q q 40 W at 25°C Case Temperature 1 A Continuous Collector Current 2 A Peak Collector Current 20 mJ Reverse-Energy Rating B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING TIP47 Collector-base voltage (IE = 0) TIP48 TIP49 TIP50 TIP47 Collector-emitter voltage (IB = 0) TIP48 TIP49 TIP50 Emitter-base voltage Continuous collector current Peak collector current (see Note 1) Continuous base current Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Unclamped inductive load energy (see Note 4) Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTE 1: 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCBO SYMBOL VALUE 350 400 450 500 250 300 350 400 5 1 2 0.6 40 2 20 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 1 ms, duty cycle ≤ 2%. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, R BE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. PRODUCT INFORMATION Information is current as of publication date. Products conform to specifications in accordance with the terms of Power Innovations standard warranty. Production processing does not necessarily include testing of all parameters. 1 TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS DECEMBER 1971 - REVISED MARCH 1997 electrical characteristics at 25°C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS TIP47 V (BR)CEO IC = 30 mA IB = 0 TIP48 TIP49 TIP50 VBE = 0 V BE = 0 V BE = 0 V BE = 0 IB = 0 IB = 0 IB = 0 IB = 0 IC = 0 IC = 0.3 A IC = IC = IC = 1A 1A 1A (see Notes 5 and 6) (see Notes 5 and 6) (see Notes 5 and 6) f = 1 kHz f = 2 MHz 25 5 30 10 1 1.5 V V TIP47 TIP48 TIP49 TIP50 TIP47 TIP48 TIP49 TIP50 MIN 250 300 350 400 1 1 1 1 1 1 1 1 1 150 mA mA mA V TYP MAX UNIT (see Note 5) VCE = 350 V ICES Collector-emitter cut-off current V CE = 400 V V CE = 450 V V CE = 500 V VCE = 150 V ICEO Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio V CE = 200 V V CE = 250 V V CE = 300 V IEBO hFE VCE(sat) VBE hfe VEB = VCE = V CE = IB = VCE = VCE = VCE = 5V 10 V 10 V 0.2 A 10 V 10 V 10 V IC = 0.2 A IC = 0.2 A |hfe| NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, d.


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