TIP35A

TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP) Complementary Silicon High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features 25 A Collector Current Low Leakage Current − ICEO = 1.0 mA @ 30 and 60 V Excellent DC Gain − hFE = 40 Typ @ 15 A High Current Gain Bandwidth Product − ⎪hfe⎪ = 3.0 min @ IC = 1.0 A, f = 1.0 MHz These are Pb−Free Devices* MAXIMUM RATINGS Rating TIP35A TIP35B TIP35C Symbol TIP36A TIP36B TIP36C Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous − Peak (Note 1) VCEO VCB VEB IC 60 60 80 100 Vdc 80 100 Vdc 5.0 Vdc Adc 25 40 Base Current − Continuous Total Power Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range IB PD TJ, Tstg 5.0 125 −65 to +150 Adc W W/_C _C Unclamped Inductive Load ESB THERMAL CHARACTERISTICS 90 mJ Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.0 °C/W Junction−To−Free−Air Thermal Resistance RqJA 35.7 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width = 10 ms, Duty Cycle v 10%. *For additional information on our Pb−Free strategy and soldering details, please ...