TIP145

TIP145/146/147 TIP145/146/147 Monolithic Construction With Built In BaseEmitter Shunt Resistors High DC Current Gain : hFE = 1000 @ VCE = -4V, IC = -5A (Min.) Industrial Use Complement to TIP140/141/142 1 TO-3P PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : TIP145 : TIP146 : TIP147 Value - 60 - 80 - 100 - 60 - 80 - 100 -5 - 10 - 15 - 0.5 125 150 - 65 ~ 150 Units V V V V V V V A A A W °C °C 1.Base 2.Collector 3.Emitter Equivalent Circuit C B VCEO VEBO IC ICP IB PC TJ TSTG Collector-Emitter Voltage : TIP145 : TIP146 : TIP147 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature R1 R2 E R 1 ≅ 8k Ω R 2 ≅ 0.12 k Ω Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP145 : TIP146 : TIP147 Collector Cut-off Curren : TIP145 : TIP146 : TIP147 ICBO Collector Cut-off Current : TIP145 : TIP146 : TIP147 IEBO hFE VCE(sat) VBE(sat) VBE(on) tD tR tSTG tF Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter ON Voltage Delay Time Rise Time Storage Time Fall Time VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VBE = - 5V, IC = 0 VCE = - 4V,IC = - 5A VCE = - 4V, IC = - 10A IC = - 5A, IB = - 10mA IC = - 10A, IB = - 40mA IC...