Darlington Complementary Silicon Power Transistors
TIP140, TIP141, TIP142, (NPN); TIP145, TIP146, TIP147, (PNP)
Designe...
Darlington Complementary Silicon Power
Transistors
TIP140, TIP141, TIP142, (
NPN); TIP145, TIP146, TIP147, (
PNP)
Designed for general−purpose amplifier and low frequency switching applications.
Features
High DC Current Gain −
Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V
Collector−Emitter Sustaining Voltage − @ 30 mA
VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145 = 80 Vdc (Min) − TIP141, TIP146 = 100 Vdc (Min) − TIP142, TIP147
Monolithic Construction with Built−In Base−Emitter Shunt Resistor These are Pb−Free Devices*
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10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER
TRANSISTORS 60−100 VOLTS, 125 WATTS
MAXIMUM RATINGS
Rating
TIP140 TIP141 TIP142 Symbol TIP145 TIP146 TIP147 Unit
Collector − Emitter Voltage VCEO
60
Collector − Base Voltage
VCB
60
Emitter − Base Voltage
VEB
Collector Current
IC
− Continuous
− Peak (Note 1)
80
100 Vdc
80
100 Vdc
5.0
Vdc
Adc 10 15
Base Current − Continuous
IB
0.5
Adc
Total Power Dissipation
PD
@ TC = 25_C
125
W
Operating and Storage
TJ, Tstg
−65 to +150
_C
Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Thermal Resistance,
RqJC
1.0
Junction−to−Case
Unit °C/W
Thermal Resistance, Junction−to−Ambient
RqJA
35.7
°C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. 5 ms, v 10% Duty Cycle.
SOT−93 (T...