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TIP100/TIP101/TIP102 — NPN Epitaxial Silicon Darlington Transistor
TIP100/TIP101/TIP102
NPN Epitaxial Silicon Darlington Transistor
• Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.) • Collector-Emitter Sustaining Voltage • Low Collector-Emitter Saturation Voltage • Industrial Use • Complementary to TIP105/106/107
Equivalent Circuit C
B
1 TO-220 1.Base 2.Collector 3.Emitter
R1
R1 @ 10kW R2 @ 0.6kW
R2 E
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol VCBO
VCEO
VEBO IC ICP IB PC
TJ TSTG
Parameter
Collector-Base Voltage
: TIP100 : TIP101
: TIP102
Collector-Emitter Voltage : TIP100 : TIP101 : TIP102
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current (DC)
Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature
Storage Temperature
* These ratings are limiting values above which the serviceability of any se.