Document
FEATURES
・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER
P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN
G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM7785-16UL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 3.6A f = 7.7 to 8.5GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 31.5dBm, ∆f= 5MHz
(Single Carrier Level)
A
Channel Temperature Rise
Tch
(VDS X IDS + Pin – P1dB)
X Rth(c-c)
°C
Recommended Gate Resistance(Rg): 68
MIN. 41.5 7.5 -44
TYP. MAX.
42.5
8.5
4.4
5.0
±0.6
35
-47
4.4
5.0
80
ELECTRICAL CHARACTERISTICS ( Ta= 25°C )
CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current
SYMBOL gm
VGSoff IDSS
CONDITIONS
VDS= 3V IDS= 6.0A
VDS= 3V IDS= 60mA
VDS= 3V VGS= 0V
Gate-Source Breakdown Voltage Thermal Resistance
VGSO Rth(c-c)
IGS= -200A Channel to Case
UNIT MIN. TYP. MAX.
S
3.6
V
-1.0 -2.5 -4.0
A
10.5
V
-5
°C/W
1.5
1.8
The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170919_No1113
Page: 1 / 4
ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C )
MICROWAVE POWER GaAs FET
TIM7785-16UL
CHARACTERISTICS
SYMBOL
UNIT
RATING
Drain-Source Voltage
VDS
V
15
Gate-Source Voltage
VGS
V
-5
Drain Current
IDS
A
14.0
Total Power Dissipation (Tc= 25°C) Channel Temperature Storage Temperature
PT
W
83.3
Tch
°C
175
Tstg
°C
-65 to +175
PACKAGE OUTLINE (2-16G1B)
Unit in mm
Gate Source Drain
HANDLING PRECAUTIONS FOR PACKAGE MODEL
Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C.
Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170919_No1113
Page: 2 / 4
RF PERFORMANCE
MICROWAVE POWER GaAs FET
TIM7785-16UL
Po (dBm)
Output Power vs. Frequency
45
VDS= 10V
44
IDS 4.4A
Pin=34.0dBm
43
42
41
40
7.4
7.6
7.8
8
8.2
8.4
8.6
8.8
Frequency (GHz)
Po (dBm)
Output Power vs. Input Power
45
f= 8.1GHz
44 VDS= 10V
IDS 4.4A
Po
43
42
41
40
ηadd
39
38
37
36
27
29
31
33
.
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