DatasheetsPDF.com

TIM7785-16UL Dataheets PDF



Part Number TIM7785-16UL
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MICROWAVE POWER GaAs FET
Datasheet TIM7785-16UL DatasheetTIM7785-16UL Datasheet (PDF)

FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.6A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency a.

  TIM7785-16UL   TIM7785-16UL



Document
FEATURES ・BROAD BAND INTERNALLY MATCHED FET ・HIGH POWER P1dB= 42.5dBm at 7.7GHz to 8.5GHz ・HIGH GAIN G1dB= 8.5dB at 7.7GHz to 8.5GHz ・HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM7785-16UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness SYMBOL CONDITIONS P1dB G1dB IDS1 G VDS= 10V IDSset= 3.6A f = 7.7 to 8.5GHz UNIT dBm dB A dB Power Added Efficiency add % 3rd Order Intermodulation Distortion Drain Current IM3 IDS2 Two Tone Test dBc Po= 31.5dBm, ∆f= 5MHz (Single Carrier Level) A Channel Temperature Rise Tch (VDS X IDS + Pin – P1dB) X Rth(c-c) °C Recommended Gate Resistance(Rg): 68  MIN. 41.5 7.5    -44   TYP. MAX. 42.5  8.5  4.4 5.0  ±0.6 35  -47  4.4 5.0  80 ELECTRICAL CHARACTERISTICS ( Ta= 25°C ) CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current SYMBOL gm VGSoff IDSS CONDITIONS VDS= 3V IDS= 6.0A VDS= 3V IDS= 60mA VDS= 3V VGS= 0V Gate-Source Breakdown Voltage Thermal Resistance VGSO Rth(c-c) IGS= -200A Channel to Case UNIT MIN. TYP. MAX. S  3.6  V -1.0 -2.5 -4.0 A  10.5  V -5   °C/W  1.5 1.8  The information contained herein is presented as guidance for product use. No responsibility is assumed by TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION (hereinafter, referred to as “TISS”) for any infringement of patents or any other intellectual property rights of third parties that may result from the use of product. No license to any intellectual property right is granted by this document. The information contained herein is subject to change without prior notice. It is advisable to contact TISS before proceeding with design of equipment incorporating this product. Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170919_No1113 Page: 1 / 4 ABSOLUTE MAXIMUM RATINGS ( Ta= 25°C ) MICROWAVE POWER GaAs FET TIM7785-16UL CHARACTERISTICS SYMBOL UNIT RATING Drain-Source Voltage VDS V 15 Gate-Source Voltage VGS V -5 Drain Current IDS A 14.0 Total Power Dissipation (Tc= 25°C) Channel Temperature Storage Temperature PT W 83.3 Tch °C 175 Tstg °C -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm  Gate  Source  Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260°C or 3 seconds at 350°C. Copyright © 2017 TOSHIBA INFRASTRUCTURE SYSTEMS & SOLUTIONS CORPORATION, All Rights Reserved. 0_20170919_No1113 Page: 2 / 4 RF PERFORMANCE MICROWAVE POWER GaAs FET TIM7785-16UL Po (dBm) Output Power vs. Frequency 45 VDS= 10V 44 IDS 4.4A Pin=34.0dBm 43 42 41 40 7.4 7.6 7.8 8 8.2 8.4 8.6 8.8 Frequency (GHz) Po (dBm) Output Power vs. Input Power 45 f= 8.1GHz 44 VDS= 10V IDS 4.4A Po 43 42 41 40 ηadd 39 38 37 36 27 29 31 33 .



Similar Datasheet



TIM7785-16 << | TIM7785-16UL | >> Tiny12


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)