TICP106M

TICP106 SERIES SILICON CONTROLLED RECTIFIERS Copyright © 1997, Power Innovations Limited, UK MARCH 1988 - REVISED MARCH 1997 q q q q q q 2 A Continuous On-State Current 15 A Surge-Current Glass Passivated Wafer 400 V to 600 V Off-State Voltage Max IGT of 200 µA Package Options PACKAGE LP LP with fomed leads PACKING Bulk Tape and Reel PART # SUFFIX (None) R LP PACKAGE (TOP VIEW) G A K 1 2 3 MDC1AA LP PACKAGE WITH FORMED LEADS (TOP VIEW) G A K MDC1AB 1 2 3 absolute maximum ratings over operating case temperature (unless otherwise noted) RATING Repetitive peak off-state voltage (see Note 1) Repetitive peak reverse voltage Continuous on-state current at (or below) 85°C case temperature (see Note 2) Surge on-state current (see Note 3) Peak positive gate current (pulse width ≤ 300 µs) Average gate power dissipation (see Note 4) Operating case temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds TICP106D TICP106M TICP106D TICP106M SYMBOL VDRM VRRM IT(RMS) ITSM IGM PG(AV) TC Tstg TL VALUE 400 600 400 600 2 15 0.2 0.3 -40 to +110 -40 to +125 230 UNIT V V A A A W °C °C °C NOTES: 1. These values apply when the gate-cathode resistance RGK = 1 kΩ. 2. These values apply for continuous dc operation with resistive load. Above 85°C derate linearly to zero at 110°C. 3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage and on-state current. Surge may be repeated af...