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THD215HI
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
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STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAG...
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THD215HI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER
TRANSISTOR
s
s s
STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)).
APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS DESCRIPTION This device is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The THD series is designed for use in horizontal deflection circuits in televisions and monitors.
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ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 C St orage Temperature Max. Operating Junction Temperature
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Value 1500 700 10 10 20 5 10 57 -65 to 150 150
Uni t V V V A A A A W
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C C 1/6
December 1999
THD215HI
THERMAL DATA
R t hj-ca se Thermal Resistance Junction-case Max 2.2
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C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CEO I CES I EBO Parameter Collector Cut-off Current (IB = 0) Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 700 V V CE = 1500 V V EB = 5 V I C = 100 mA 700 Min. Typ . Max. 10 10 100 Un it µA µA µA V
V CEO(sus )∗ Collector-Em...