THBT200

® THBT200S TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION Application Specific Discretes A.S.D.™ FEATURES DUAL BIDIRECTIONALCROWBARPROTECTION. PEAK PULSE CURRENT : - IPP = 75 A, 10/1000 µs. HOLDING CURRENT = 150 mA min BREAKDOWN VOLTAGE = 200 V min. BREAKOVER VOLTAGE = 290 V max. MONOLITHIC DEVICE. DESCRIPTION This monolithic protection device has been especially designed to protect subscriber line cards.The THBT200 device is particularly suitable to protect ring generator relay against transient overvoltages. SIP3 COMPLIESWITHTHE FOLLOWINGSTANDARDS: CCITT K20 : VDE 0433 : VDE 0878 : FCC part 68 : BELLCORE TR-NWT-001089 : 10/700 µs 5/310 µs 10/700 µs 5/310 µs 1.2/50 µs 1/20 µs 2/10 µs 2/20µs 2/10 µs 2/10µs 10/1000µs 10/1000µs 1kV 25A 2kV 50A 1.5kV 40A 2.5kV 225A (*) 2.5kV 225A (*) 1kV 75A (*) SCHEMATIC DIAGRAM N C 1 T ip 2 G N D 3 (*) with series resistors or PTC. R in g 4 TM: ASD is trademarks of SGS-THOMSON Microelectronics. February 1998 Ed: 2 1/7 THBT200S ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C) Symbol IPP Parameter Peak pulse current (see note 1) 10/1000 µs 5/310 µs 8/20 µs 2/10 µs tp = 20ms Value 75 125 150 225 30 - 40 to + 150 150 230 Unit A ITSM Tstg Tj TL Non repetitive surge peak on-state current (F = 50Hz) Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10s A °C °C Note 1 : Pulse waveform : 10/1000µs tr=10µs 5/310µs tr=5µs 2/10µs tr=2µs tp=1000µs tp=310µs tp=10µs % I PP 100 50 0 tr t...