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TLP747JF

Toshiba Semiconductor

Photocoupler

TLP747JF TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP747JF Office Machine Switching Power Supply The TOSHIBA TL...


Toshiba Semiconductor

TLP747JF

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Description
TLP747JF TOSHIBA Photocoupler GaAs Ired & Photo−Thyristor TLP747JF Office Machine Switching Power Supply The TOSHIBA TLP747JF consists of a photo−thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. All parameters are tested to the specification of TLP747J. (both condition and limits) · · · · · Peak off−state voltage: 600V (min.) Trigger LED current: 15mA (max.) On−state current: 150mA (max.) UL recognized: UL1577, file No. E67349 BSI approved: BS EN60065: 1994, certificate No. 7364 BS EN60950: 1992, certificate No. 7365 SEMKO approved: SS4330784, certificate No. 9325163 No. 9522142 Isolation voltage: 4000Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, certificate no. 74286, 91808 Maximum operating insulation voltage: 890, 1130VPK Highest permissible over voltage: 6000, 8000VPK (Note) When a VDE0884 approved type is needed, please designate the “ Option (D4) ” TOSHIBA Weight: 0.42g 11−7A802 Unit in mm · · · · Pin Configurations (top view) 1 2 3 1 : Anode 2 : Cathode 3 : NC 4 : Cathode 5 : Anode 6 : Gate 6 5 4 · Creepage distance: 8.0mm (min.) Clearance: 8.0mm (min.) Internal creepage path: 4.0mm (min.) Insulation thickness: 0.5mm (min.) Conforming safety standards: DIN 57 804. VDE0804 / 1.83 DIN IEC65 / VDE0860 / 8.81 DIN IEC380 / VDE0806 / 8.81 DIN IEC435 / VDE0805 / draft Nov.84 DIN IEC601T1 / VDE0750T1 / 5.82 BS7002: 1989 (EN60950) · 1 2002-09-25 TLP747JF RESTRICTIONS ON PRODUCT USE 000707EBC · TOS...




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