TLP733

TLP733,TLP734 TOSHIBA Photocoupler GaAs Ired&Photo−Transistor TLP733, TLP734 Office Machine Household Use Equipment Solid State Relay Switching Power Supply The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP. TLP734 is no−base internal connection for high−EMI environments. · · · · Collector−emitter voltage: 55 V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) UL recognized: UL1577, file no. E67349 BSI approved: BS EN60065: 1994 Certificate no. 7364 BS EN60950: 1992 Certificate no. 7365 · · · SEMKO approved: SS4330784 Certificate no. 9325163, 9522142 Isolation voltage: 4000 Vrms (min.) Option (D4) type VDE approved: DIN VDE0884 / 06.92, Certificate no. 74286, 91808 Maximum operating insulation voltage: 630, 890 VPK Highest permissible over voltage: 6000, 8000 VPK (Note) When a VDE0884 approved type is needed, please designate the “Option (D4)” 1 Unit in mm TOSHIBA Weight: 0.42 g 11−7A8 Pin Configurations (top view) TLP733 6 5 4 1 2 3 TLP734 6 5 4 · Creepage distance Clearance Insulation thickness 7.62 mm pich standard type : 7.0 mm (min.) : 7.0 mm (min.) : 0.5 mm (min.) 10.16 mm pich TLP×××F type 8.0 mm (min.) 8.0 mm (min.) 4.0 mm (min.) 0.5 mm (min.) 2 3 Internal creepage path : 4.0 mm (min.) 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base 1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc 1 2002-09-25 TLP733,TLP734 Current Transfer ...