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TLP504A Dataheets PDF



Part Number TLP504A
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Photocoupler
Datasheet TLP504A DatasheetTLP504A Datasheet (PDF)

TLP504A,TLP504A−2 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP504A,TLP504A−2 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package. • Collector−emitter voltage: 55 V (min.) .

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TLP504A,TLP504A−2 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP504A,TLP504A−2 Programmable Controllers AC / DC−Input Module Solid State Relay Unit in mm The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package. • Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.) Rank GB: 100% (min.) • Isolation voltage: 2500 Vrms (min.) • UL recognized: UL1577, File no. E67349 TOSHIBA Weight: 0.54 g (typ.) 11−10C4 Pin Configurations (top view) TLP504A 1 8 TLP504A-2 1 16 27 36 45 1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector 2 3 4 5 6 7 15 14 13 12 11 10 89 1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector TOSHIBA Weight: 1.1 g (typ.) 11−20A3 1 2007-10-01 TLP504A,TLP504A−2 Absolute Maximum Ratings (Ta = 25°C) Detector LED Characteristic Forward current Forward current derating Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage Symbol IF ΔIF / °C IFP VR Tj VCEO VECO IC PC ΔPC / °C Tj Tstg Topr Tsol RT ΔPT / °C BVS TLP504A Rating TLP504A−2 60 50 −0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) 1 (100μs pulse, 100pps) 5 125 55 7 50 150 100 −1.5 −1.0 125 −55~150 −55~100 260 (10 s) 250 150 −2.5 −1.5 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Unit mA mA /°C A V °C V V mA mW mW /°C °C °C °C °C mW mW / °C Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min. Typ. Max. Unit Supply voltage Forward current Collector current Operating temperature VCC IF IC Topr ―5 ― 16 ―1 −25 ― 24 V 20 mA 10 mA 85 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2 2007-10-01 Individual Electrical Characteristics (Ta = 25°C) Detector LED Characteristic Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage Collector dark current Capacitance collector to emitter Symbol Test Condition VF IF = 10 mA IR VR = 5 V CT V = 0, f = 1 MHz V(BR) CEO IC = 0.5 mA V(BR) ECO IE = 0.1 mA ICEO CCE VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz Coupled Electrical Characteristics (Ta = 25°C) Characteristic Current transfer ratio Saturated CTR Collector−emitter saturation voltage Symbol Test Condition IC / IF IF = 5 mA, VCE = 5 V Rank GB IC / IF (sat) IF = 1 mA, VCE = 0.4 V Rank GB VCE (sat) IC = 2.4 mA, IF = 8 mA IC = 0.2 mA, IF = 1 mA Rank GB TLP504A,TLP504A−2 Min. Typ. Max. Unit 1.0 1.15 1.3 — — 10 — 30 — V μA pF 55 — — V 7 —— V — 10 100 nA — 2 50 μA — 10 — pF Min. Typ. Max. Unit 50 — 600 100 — 600 — 60 — 30 — — — — 0.4 — 0.2 — — — 0.4 % % V Isolation Characteristics (Ta = 25°C) Characteristic Capacitance input to output Isolation resistance Isolation voltage Symbol CS RS BVS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute AC, 1 second, in oil DC, 1 minute, in oil Min. Typ. Max. Unit — 0.8 — pF 5×1010 1014 — Ω 2500 — — Vrms — 5000 — — 5000 — Vdc 3 2007-10-01 TLP504A,TLP504A−2 Switching Characteristics (Ta = 25°C) Characteristic Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time Fig. 1 Switching time test circuit IF RL Symbol tr tf ton toff tON ts tOFF Test Condition Min. VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA (Fig.1) — — — — — — — Typ. Max. Unit 2— 3— μs 3— 3— 2— 15 — μs 25 — VCC VCE IF VCE tON tS 4.5V VCC 0.5V tOFF 4 2007-10-01 Allowable forward current IF (mA) Allowable pulse forward current IFP (.


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