Document
TLP504A,TLP504A−2
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP504A,TLP504A−2
Programmable Controllers AC / DC−Input Module Solid State Relay
Unit in mm
The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode. The TLP504A offers two isolated channels in an eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package.
• Collector−emitter voltage: 55 V (min.) • Current transfer ratio: 50% (min.)
Rank GB: 100% (min.) • Isolation voltage: 2500 Vrms (min.) • UL recognized: UL1577,
File no. E67349
TOSHIBA Weight: 0.54 g (typ.)
11−10C4
Pin Configurations (top view)
TLP504A 1
8
TLP504A-2 1
16
27
36
45
1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector
2 3 4 5 6 7
15 14 13 12 11 10
89
1, 4, 5, 8 : Anode 2, 3, 6, 7 : Cathode 9, 12, 13, 16 : Emitter 10, 11, 14, 15 : Collector
TOSHIBA Weight: 1.1 g (typ.)
11−20A3
1 2007-10-01
TLP504A,TLP504A−2
Absolute Maximum Ratings (Ta = 25°C)
Detector LED
Characteristic
Forward current Forward current derating Pulse forward current Reverse voltage Junction temperature Collector−emitter voltage Emitter−collector voltage Collector current Collector power dissipation (1 circuit) Collector power dissipation derating (1 circuit Ta ≥ 25°C) Junction temperature Storage temperature range Operating temperature range Lead soldering temperature Total package power dissipation Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage
Symbol
IF ΔIF / °C
IFP VR Tj VCEO VECO IC
PC
ΔPC / °C
Tj Tstg Topr Tsol RT
ΔPT / °C
BVS
TLP504A
Rating TLP504A−2
60 50
−0.7 (Ta ≥ 39°C)
−0.5 (Ta ≥ 25°C)
1 (100μs pulse, 100pps)
5
125
55
7
50
150 100
−1.5 −1.0
125 −55~150 −55~100 260 (10 s) 250 150
−2.5 −1.5
2500 (AC, 1min., R.H.≤ 60%) (Note 1)
Unit
mA mA /°C
A V °C V V mA
mW
mW /°C
°C °C °C °C mW
mW / °C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristics
Symbol
Min. Typ. Max. Unit
Supply voltage Forward current Collector current Operating temperature
VCC IF IC
Topr
―5 ― 16 ―1 −25 ―
24 V 20 mA 10 mA 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document.
2 2007-10-01
Individual Electrical Characteristics (Ta = 25°C)
Detector LED
Characteristic
Forward voltage Reverse current Capacitance Collector−emitter breakdown voltage Emitter−collector breakdown voltage
Collector dark current
Capacitance collector to emitter
Symbol
Test Condition
VF IF = 10 mA IR VR = 5 V CT V = 0, f = 1 MHz
V(BR) CEO IC = 0.5 mA
V(BR) ECO IE = 0.1 mA
ICEO CCE
VCE = 24 V VCE = 24 V, Ta = 85°C V = 0, f = 1 MHz
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Current transfer ratio
Saturated CTR
Collector−emitter saturation voltage
Symbol
Test Condition
IC / IF
IF = 5 mA, VCE = 5 V Rank GB
IC / IF (sat)
IF = 1 mA, VCE = 0.4 V Rank GB
VCE (sat)
IC = 2.4 mA, IF = 8 mA IC = 0.2 mA, IF = 1 mA
Rank GB
TLP504A,TLP504A−2
Min. Typ. Max. Unit
1.0 1.15 1.3 — — 10 — 30 —
V μA pF
55 — —
V
7 —— V
— 10 100 nA — 2 50 μA — 10 — pF
Min. Typ. Max. Unit
50 — 600 100 — 600 — 60 — 30 — — — — 0.4 — 0.2 — — — 0.4
% % V
Isolation Characteristics (Ta = 25°C)
Characteristic Capacitance input to output Isolation resistance
Isolation voltage
Symbol CS RS
BVS
Test Condition
VS = 0, f = 1 MHz VS = 500 V AC, 1 minute AC, 1 second, in oil DC, 1 minute, in oil
Min. Typ. Max. Unit
— 0.8 — pF
5×1010 1014
—
Ω
2500 —
—
Vrms
— 5000 —
— 5000 —
Vdc
3 2007-10-01
TLP504A,TLP504A−2
Switching Characteristics (Ta = 25°C)
Characteristic
Rise time Fall time Turn−on time Turn−off time Turn−on time Storage time Turn−off time
Fig. 1 Switching time test circuit
IF RL
Symbol
tr tf ton toff tON ts tOFF
Test Condition
Min.
VCC = 10 V, IC = 2 mA RL = 100Ω RL = 1.9 kΩ VCC = 5 V, IF = 16 mA
(Fig.1)
— — — — — — —
Typ. Max. Unit
2— 3—
μs 3— 3— 2— 15 — μs 25 —
VCC VCE
IF VCE
tON
tS
4.5V VCC 0.5V
tOFF
4 2007-10-01
Allowable forward current IF (mA)
Allowable pulse forward current IFP (.