TLP251

TOSHIBA Photocoupler IRED & Photo-IC TLP251 Inverter For Air Conditioner Induction Heating Transistor Inverter Power MOS FET Gate Drive IGBT Gate Drive TLP251 Unit: mm The TOSHIBA TLP251 consists of an infrared emitting diode and a integrated photodetector. This unit is 8-lead DIP package. TLP251 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. ( to 15A)  Input threshold current: IF=5mA(max.)  Supply current (ICC): 11mA(max.)  Supply voltage (VCC): 10−35V  Output current (IO): ±0.4A(max.)  Switching time (tpLH / tpHL): 1μs(max.)  Isolation voltage: 2500Vrms(min.)  UL-recognized: UL 1577, File No.E67349  cUL-recognized: CSA Component Acceptance Service No.5A File No.E67349  VDE-Approved: EN 60747-5-5 (Note 1) TOSHIBA 11−10C4S Weight: 0.54 g (typ.) Pin Configuration (top view) 1 8 2 7 Note 1:When a VDE approved type is needed, 3 6 please designate the Option(D4). 4 5 Truth Table Tr1 Tr2 Input On On Off LED Off Off On 1 : N.C. 5 : GND 2 : Anode 6 : VO (Output) 3 : Cathode 7 : N.C. 4 : N.C. 8 : VCC Schematic ICC VCC 8 IF 2 (Tr 1) VF 3 6 VO IO (Tr 2) GND 5 A 0.1μF bypass capcitor must be connected between pin 8 and 5(see Note 5). © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1992-01 2019-06-17 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 20 mA F...