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TMMDB3TG

STMicroelectronics

DIAC

® TMMDB3TG DIAC FEATURES s s s VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRI...


STMicroelectronics

TMMDB3TG

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Description
® TMMDB3TG DIAC FEATURES s s s VBO : 32V Low breakover current: 15µA max Breakover voltage range: 30 to 34V DESCRIPTION Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. MINIMELF ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol ITRM Parameter Repetitive peak on-state current tp = 20 µs F= 120 Hz Storage temperature range Operating junction temperature range Value 2 Unit A °C Tstg Tj - 40 to + 125 January 2001 - Ed: 2 1/4 TMMDB3TG ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Symbol VBO Parameter Breakover voltage * Test Conditions C = 22nF ** MIN. TYP. MAX. I VBO1 - VBO2 I ∆V VO IBO tr IR Breakover voltage symmetry Dynamic breakover voltage * Output voltage * Breakover current * Rise time * Leakage current * C = 22nF ** VBO and VF at 10mA see diagram 2 (R=20Ω) C = 22nF ** see diagram 3 VR = 0.5 VBO max MAX. MIN. MIN. MAX. MAX. MAX. Value 30 32 34 ±2 9 5 15 2 10 V V V µA µs µA Unit V * Applicable to both forward and reverse directions. ** Connected in parallel to the device. ORDERING INFORMATION TMM MINIMELF Diac Series DB 3 TG Special VBO range Breakover voltage 3: VBO typ = 32V OTHER INFORMATION Part Number TMMDB3TG (None) Marking Weight 0.04 g Base Quantity 2500 Packing Mode Tape & Reel 2/4 TMMDB3TG Diagram 1: Voltage - current characteristic curve. Diagram 2: Test circuit. 10 ...




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