®
TMMBAT 41
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION General purpose metal to silicon diode featuring very low turn-on ...
®
TMMBAT 41
SMALL SIGNAL
SCHOTTKY DIODE
DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Repetitive Peak Forward Current Surge non Repetitive Forward Current Power Dissipation Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 25 °C tp ≤ 1s δ ≤ 0.5 tp = 10ms Ti = 95 °C
MINIMELF (Glass)
Value 100 100 350 750 100 - 65 to + 150 - 65 to + 125 260
Unit V mA mA mA mW °C °C °C
THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 300 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR VF* Tj = 25°C Tj = 25°C Tj = 25°C IR* Tj = 25°C Tj = 100°C Test Conditions IR = 100µA IF = 1mA IF = 200mA VR = 50V Min. 100 0.4 0.45 1 0.1 20 µA Typ. Max. Unit V V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test Conditions VR = 1V f = 1MHz Min. Typ. 2 Max. Unit pF
* Pulse test: tp ≤ 300µs δ < 2%.
August 1999 Ed: 1A
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TMMBAT 41
Figure 1. Forward current versus forward voltage at different temperatures (typical values). Figure 2. Forward current versus forward voltage (typical values).
Figure 3. Reverse current versus junction temperature.
Figure 4. Reverse current versus continuous reverse voltage (typical values).
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