®
TMM 6263
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-...
®
TMM 6263
SMALL SIGNAL
SCHOTTKY DIODE
DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. ABSOLUTE MAXIMUM RATINGS (limiting values)
Symbol VRRM IF IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current Surge non Repetitive Forward Current Storage and Junction Temperature Range Maximum Temperature for Soldering during 15s Ti = 25 °C tp ≤ 1s
MINIMELF (Glass)
Value 60 15 50 - 65 to 200 -65 to 200 260
Unit V mA mA °C °C
THERMAL RESISTANCE
Symbol Rth(j-l) Junction-leads Test Conditions Value 400 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol VBR VF* Tamb = 25°C Tamb = 25°C Tamb = 25°C IR* Tamb = 25°C Test Conditions IR = 10µA IF = 1mA IF = 15mA VR = 50V Min. 60 0.41 1 0.2 µA Typ. Max. Unit V V
DYNAMIC CHARACTERISTICS
Symbol C τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2.2 100 Unit pF ps
* Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification.
August 1999 Ed: 1A
1/3
TMM 6263
Figure 1. Forward current versus forward voltage (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typical values).
Figure 3. Reverse current versus ambient temperature.
Figure 4. Reverse current versus ...
