DatasheetsPDF.com

TM130RZ-H Dataheets PDF



Part Number TM130RZ-H
Manufacturers Mitsubishi Electric Semiconductor
Logo Mitsubishi Electric Semiconductor
Description HIGH POWER GENERAL USE INSULATED TYPE
Datasheet TM130RZ-H DatasheetTM130RZ-H Datasheet (PDF)

MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • (RZ Type) Average on-state current 130A Average forward current 130A Repetitive peak reverse voltage ... 400/800V VDRM Repetitive peak off-state voltage ... 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contac.

  TM130RZ-H   TM130RZ-H


Document
MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE TM130RZ/EZ/GZ-M,-H • IT (AV) • IF (AV) • VRRM • • • • (RZ Type) Average on-state current .......... 130A Average forward current .......... 130A Repetitive peak reverse voltage ........ 400/800V VDRM Repetitive peak off-state voltage ........ 400/800V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 3–φ6.5 3–M8 A1 20 (RZ) K1 K2 A2 A1 40 CR K1 A2 K2 SR K1 G1 K1 G1 6 18 30 68.5 16 32 150 18 30 68.5 16 (EZ) CR A1 K 1 K2 Tab#110, t=0.5 23 9 32 39 A2 SR K1 G1 LABEL 7 (GZ) CR A1 K 1 K2 SR A2 K1 G1 (RZ Type) (Bold line is connective bar.) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class M 400 480 320 400 480 320 H 800 960 640 800 960 640 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M8 Conditions Single-phase, half-wave 180° conduction, TC=85°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125°C Ratings 205 130 2600 2.8 × 104 100 10 3.0 10 5.0 4.0 –40~125 –40~125 2500 8.83~10.8 90~110 1.96~3.92 20~40 300 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=390A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 30 30 1.3 — 3.0 — 100 0.22 0.1 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode — — — — VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg — — — — ELECTRICAL CHARACTERISTICS Item Thyristor Diode — — — — — IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 4 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 2 7 5 3 2 10 1 0.4 3200 SURGE (NON-REPETITIVE) CURRENT (A) Tj=125°C 2800 2400 2000 1600 1200 800 400 0.8 1.2 1.6 2.0 2.4 0 1 2 3 5 7 10 20 30 50 70100 RATED SURGE (NON-REPETITIVE) CURRENT FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) 7 5 3 2 VGT=3.0V PG(AV)= 3.0W VFGM=10V PGM=10W TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.25 0.20 0.15 10 0 7 5 IGT= 100mA 3 2 Tj=25°C 0.10 10 –1 VGD=0.25V IFGM=4.0A 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) Feb.1999 MITSUBISHI THYRISTOR MODULES TM130RZ/EZ/GZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) 160 120° 140 120 60° 100 80 60 40 20 0 0 20 40 60 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 120 CASE TEMPERATURE (°C) 110 100 90 80 70 60 50 0 20 40 60 80 100 120 140 160 θ=30° 60° 90° 180° 120° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 180° 90° θ=30° 80 100 120 140 160 AVERAGE CURRENT (A) AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) 200 180 160 140 120 100 80 60 40 20 0 0 MAXIM.


TM130RZ-2H TM130RZ-H TM130RZ-M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)