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TPDV625

STMicroelectronics

ALTERNISTORS

TPDV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (U...


STMicroelectronics

TPDV625

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TPDV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB81734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V DESCRIPTION The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter A1 A2 G TOP 3 (Plastic) Value Tc = 85 °C 25 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 625 825 800 TPDV 1025 1000 1225 1200 Unit VDRM VRRM March 1995 Repetitive peak off-state voltage Tj = 125 °C 600 V 1/5 TPDV 625 ---> 1225 THERMAL RESISTANCES Symbol Rth (j-a) Contact to ambient Parameter Value 50 1.5 1.1 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1...




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