TPCS8209

TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.2 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 5 20 1.1 W 0.75 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-3R1E Drain power dissipation Single-device value (t = 10 s) (Note 2a) at dual operation (Note 3b) Single-device Drain power operation (Note 3a) dissipation Single-device value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Weight: 0.035 g (typ.) 0.6 W 0.35 Circuit Configuration 8 7 6 5 32.5 5 0.075 150 −55~150 mJ A mJ °C °C 1 2 3 4 Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatic sensitive device. Please handle with caution. ...