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TPCF8102

Part Number	TPCF8102
Manufacturer	Toshiba Semiconductor
Description	Silicon P-Channel MOSFET
Published	Apr 16, 2005
Detailed Description	TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Porta...
Datasheet	TPCF8102 PDF File

Overview

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.
) • High forward transfer admittance: |Yfs| = 14 S (typ.
) • Low leakage current : IDSS = −10 μA (max) (VDS = −20 V) • Enhancement mode : Vth = −0.
5 to −1.
2 V (VDS = −10 V, ID = −200 μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pul...

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