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TPC8305

Toshiba Semiconductor
Part Number TPC8305
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8305 Lithium Ion Battery Applications P...
Datasheet PDF File TPC8305 PDF File

TPC8305
TPC8305

Overview
TPC8305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSII) TPC8305 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 24 mΩ (typ.
) High forward transfer admittance : |Yfs| = 12 S (typ.
) Low leakage current : IDSS = −10 µA (max) (VDS = −20 V) Enhancement−mode : Vth = −0.
5~ −1.
2 V (VDS = −10 V, ID = −1mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating −20 −20 ±12 −5 −20 1.
5 W PD(2) 1.
0 Unit V V V A JEDEC JE...


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