TPC8301

TPC8301 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSVI) TPC8301 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 95 mΩ (typ.) High forward transfer admittance : |Yfs| = 4 S (typ.) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.8~ −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −3.5 −14 1.5 W 1.0 0.75 W 0.45 16 −3.5 0.10 150 −55 150 mJ A mJ Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Drain power dissipation Single-devece value (t = 10 s) (Note 2a) at dual operation (Note 3b) Drain power dissipation Single-devece value (t = 10 s) (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a) Single-device operation (Note 3a) Weight: 0.080 g (typ.) Circuit Configuration Note: For (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-05-17 TP...