TPC8206

TPC8206 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) TPC8206 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 40 mΩ (typ.) High forward transfer admittance: |Yfs| = 7.0 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 60 60 ±20 5 20 1.5 W 1.0 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-6J1E Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Single-device operation (Note 3a) Single-device value at dual operation (Note 3b) Weight: 0.080 g (typ.) 0.75 W 0.45 Circuit Configuration 8 7 6 5 Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range 92 5 0.1 150 -55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. This transistor is an electrostatic sensitive device. Please ...