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TPC8111 Dataheets PDF



Part Number TPC8111
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description P-Channel MOSFET
Datasheet TPC8111 DatasheetTPC8111 Datasheet (PDF)

TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C.

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TPC8111 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8111 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −44 1.9 1.0 31.5 −11 0.19 150 −55 to 150 Unit V V V A Pulse (Note 1) JEDEC W W mJ A mJ °C °C ― ― 2-6J1B Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-03-25 TPC8111 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W Marking (Note 5) TPC8111 ※ Type Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) (b) Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-03-25 TPC8111 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS −10 V 4.7 Ω ID = −5.5 A VOUT RL = 2.7 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −5.5 A VGS = −10 V, ID = −5.5 A VDS = −10 V, ID = −5.5 A Min   −30 −15 −0.8   11         VDD ∼ − −24 V, VGS = 10 V, ID = −11 A   Typ.      12 8.1 23 5710 560 590 18 23 109 396 107 12 20 Max ±10 −10   −2.0 18 12       ns      nC pF Unit µA µA V V mΩ S VDD ∼ − −15 V Duty < = 1%, tw = 10 µs Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition  IDR = −11 A, VGS = 0 V Min   Typ.   Max −44 1.2 Unit A V 3 2002-03-25 TPC8111 ID – VDS −10 −10 −5 −3 −4 −2.5 −2.4 −2.3 −6 −2.2 −4 −2.1 −2 VGS = −2 V Common source Ta = 25°C Pulse test −20 −10 −3 −2.7 −5 −4 −12 ID – VDS −2.6 −2.5 Common source Ta = 25°C Pulse test −8 −16 (A) (A) ID Drain current Drain current ID −2.4 −2.3 −8 −2.2 −4 VGS = −2.1 V 0 0 −2 −4 −6 −8 −10 0 0 −4 −8 −12 −16 −20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID – VGS −40 Common source VDS = −10 V Pulse test −0.5 VDS – VGS Common source Ta = 25°C Pulse test (V) Drain-source voltage VDS ID (A) −30 −0.4 −0.3 Drain current −20 −0.2 ID = −11 A −0.1 −5.5 −10 25 100 0 0 −1 −2 Ta = −55°C −3 −4 −5 0 0 −2.5 −4 −8 −12 −16 −20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| – ID 100 100 50 Ta = −55°C 25 10 5 3 100 RDS (ON) – ID |Yfs| (S) 50 Drain-source ON resistance RDS (ON) (mΩ) 30 30 VGS = −4.5 V 10 5 3 −10 Forward transfer admittance 1 0.5 0.3 −0.1 −0.3 −0.5 −1 −3 −5 Common source VDS = −10 V Pulse test −10 −30 −50 1 0.5 0.3 −0.1 −0.3 −0.5 −1 −3 −5 Common source Ta = 25°C Pulse test −10 −30 −50 Drain current ID (A) Drain current ID (A) 4 2002-03-25 TPC8111 RDS (ON) – Ta 25 Common source 20 ID = −11 A, −5.5 A, −2.5 A Pulse test −100 −10 IDR – VDS −5 −3 −10 Drain-source ON resistance RDS (ON) (mΩ) VGS = −4.5 V 10 ID = −11 A, −5.5 A, −2.5 A 5 −10 Drain reverse current 15 IDR (A) −1 −1 VGS = 0 V 0 −80 −40 0 .


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