Document
TPC8111
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPC8111
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −30 −30 ±20 −11 −44 1.9 1.0 31.5 −11 0.19 150 −55 to 150 Unit V V V A
Pulse (Note 1)
JEDEC
W W mJ A mJ °C °C
― ― 2-6J1B
Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
JEITA TOSHIBA
Weight: 0.080 g (typ.)
Circuit Configuration
8 7 6 5
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
1 2 3 4
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Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W
Marking (Note 5)
TPC8111
※
Type
Note 1: Please use devices on condition that the channel temperature is below 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 × 25.4 × 0.8 (unit: mm)
FR-4 25.4 × 25.4 × 0.8 (unit: mm)
(a)
(b)
Note 3: VDD = −24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = −11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: • on lower left of the marking indicates Pin 1. ※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.)
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Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain (“miller”) charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS −10 V 4.7 Ω ID = −5.5 A VOUT RL = 2.7 Ω VDS = −10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = ±16 V, VDS = 0 V VDS = −30 V, VGS = 0 V ID = −10 mA, VGS = 0 V ID = −10 mA, VGS = 20 V VDS = −10 V, ID = −1 mA VGS = −4 V, ID = −5.5 A VGS = −10 V, ID = −5.5 A VDS = −10 V, ID = −5.5 A Min −30 −15 −0.8 11 VDD ∼ − −24 V, VGS = 10 V, ID = −11 A Typ. 12 8.1 23 5710 560 590 18 23 109 396 107 12 20 Max ±10 −10 −2.0 18 12 ns nC pF Unit µA µA V V mΩ S
VDD ∼ − −15 V Duty < = 1%, tw = 10 µs
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = −11 A, VGS = 0 V Min Typ. Max −44 1.2 Unit A V
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ID – VDS
−10 −10 −5 −3 −4 −2.5 −2.4 −2.3 −6 −2.2 −4 −2.1 −2 VGS = −2 V Common source Ta = 25°C Pulse test −20 −10 −3 −2.7 −5 −4 −12
ID – VDS
−2.6 −2.5 Common source Ta = 25°C Pulse test
−8
−16
(A)
(A)
ID
Drain current
Drain current
ID
−2.4
−2.3 −8 −2.2 −4 VGS = −2.1 V
0 0
−2
−4
−6
−8
−10
0 0
−4
−8
−12
−16
−20
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID – VGS
−40 Common source VDS = −10 V Pulse test −0.5
VDS – VGS
Common source Ta = 25°C Pulse test
(V) Drain-source voltage VDS
ID
(A)
−30
−0.4
−0.3
Drain current
−20
−0.2 ID = −11 A −0.1 −5.5
−10 25 100 0 0 −1 −2 Ta = −55°C −3 −4 −5
0 0
−2.5 −4 −8 −12 −16 −20
Gate-source voltage
VGS
(V)
Gate-source voltage
VGS
(V)
|Yfs| – ID
100 100 50 Ta = −55°C 25 10 5 3 100
RDS (ON) – ID
|Yfs| (S)
50
Drain-source ON resistance RDS (ON) (mΩ)
30
30 VGS = −4.5 V 10 5 3 −10
Forward transfer admittance
1 0.5 0.3 −0.1 −0.3 −0.5 −1 −3 −5 Common source VDS = −10 V Pulse test −10 −30 −50
1 0.5 0.3 −0.1 −0.3 −0.5 −1 −3 −5 Common source Ta = 25°C Pulse test −10 −30 −50
Drain current
ID
(A)
Drain current
ID
(A)
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RDS (ON) – Ta
25 Common source 20 ID = −11 A, −5.5 A, −2.5 A Pulse test −100 −10
IDR – VDS
−5 −3 −10
Drain-source ON resistance RDS (ON) (mΩ)
VGS = −4.5 V 10 ID = −11 A, −5.5 A, −2.5 A 5 −10
Drain reverse current
15
IDR
(A)
−1 −1
VGS = 0 V
0 −80
−40
0
.