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TPC8107

Toshiba Semiconductor
Part Number TPC8107
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications ...
Datasheet PDF File TPC8107 PDF File

TPC8107
TPC8107

Overview
TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications · · · · · Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.
5 mΩ (typ.
) High forward transfer admittance: |Yfs| = 31 S (typ.
) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement-mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) S...


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