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TPC8106-H

Toshiba Semiconductor
Part Number TPC8106-H
Manufacturer Toshiba Semiconductor
Description P-Channel MOSFET
Published Apr 16, 2005
Detailed Description TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8106−H High Speed and High...
Datasheet PDF File TPC8106-H PDF File

TPC8106-H
TPC8106-H

Overview
TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8106−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Low drain−source ON resistance : Qg = 52 nC (typ.
) : RDS (ON) = 14 mΩ (typ.
) Unit: mm High forward transfer admittance : |Yfs| = 16.
6 S (typ.
) Low leakage current : IDSS = −10 µA (max) (VDS = −30 V) Enhancement−mode : Vth = −0.
8~ −2.
0 V (VDS =− 10 V, ID = −1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source v...


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