TPC6101

TPC6101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) TPC6101 Notebook PC Applications Portable Equipment Applications · · · · Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-model: Vth = −0.5 to −1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kW) Gate-source voltage DC Drain current (Note 1) Pulse (Note 1) Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 4) Symbol VDSS VDGR VGSS ID Rating -20 -20 ±12 -4.5 A IDP -18 Unit V V V JEDEC JEITA ― ― 2-3T1A PD 2.2 W TOSHIBA Weight: 0.011 g (typ.) PD EAS IAR EAR Tch Tstg 0.7 3.3 -2.25 0.22 150 -55 to 150 W mJ A mJ °C °C Circuit Configuration 6 5 4 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Symbol Rth (ch-a) Max 56.8 Unit 1 2 3 Marking (Note 5) °C/W Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Rth (ch-a) 178.5 °C/W S3A Note: (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) Please see next page. This transistor is an electrostatically sensitive device. Please handle it with caution. 1 2002-01-17 TPC6101 Electrical Characteristics (Ta...