MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by TP3032/D
NPN Silicon RF Power Transistor
The...
MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document by TP3032/D
NPN Silicon RF Power
Transistor
The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. Specified 26 Volts, 960 MHz Characteristics Output Power — 21 Watts Gain — 7.5 dB min Silicon Nitride Passivated Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration Class AB Operation Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
TP3032
21 W, 960 MHz RF POWER
TRANSISTOR NPN SILICON
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector–Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VCER VCBO VEBO IC PD Tstg TJ Value 40 48 3.5 4 52.5 0.3 – 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C CASE 319–07, STYLE 2
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case (1) Symbol RθJC Max 3.3 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 30 mA, RBE = 75 Ω) Emitter–Base Breakdown Voltage (IE = 5 mAdc) Collector–Base Breakdown Voltage (IC = 30 mAdc) Collector–Emitter Leakage (VCE = 26 V, RBE = 75 Ω) V(BR)CER V(BR)EBO V(BR)CBO ICER 40 3.5 48 — — — — — — — — 8 V...