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TODV825 Dataheets PDF



Part Number TODV825
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description ALTERNISTORS
Datasheet TODV825 DatasheetTODV825 Datasheet (PDF)

TODV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 ---> 1225 use high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS).

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TODV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 625 ---> 1225 use high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter Tc = 80 °C Value 25 Unit A RD91 (Plastic) ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 625 825 800 TODV 1025 1000 1225 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V March 1995 1/5 TODV 625 ---> 1225 THERMAL RESISTANCES Symbol Rth (c-h) Parameter Contact (case-heatsink) with grease Value 0.1 1.6 1.2 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL VD=12V VD=12V (DC) (DC) Test Conditions RL =33Ω RL =33Ω Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III I-III II IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM= 35A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C TYP MAX MAX MAX MIN MAX MAX MIN TYP TYP Value 150 1.5 0.2 2.5 100 200 50 1.8 0.02 8 500 V/µs mA V mA Unit mA V V µs mA VD=VDRM R L=3.3k Ω VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT Linear slope up to VD =67%VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs (dI/dt)c * Tj=125°C MIN 20 88 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TODV 625 ---> 1225 Fig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 0.1 tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E+1 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 TODV 625 ---> 1225 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. 4/5 TODV 625 ---> 1225 PACKAGE MECHANICAL DATA RD91 Plastic L2 a2 LI REF. Min. DIMENSIONS Millimeters Max. 40.00 29.90 30.30 22.00 27.00 13.50 16.50 24.00 14.00 3.50 1.95 0.70 4.00 11.20 3.10 1.70 33° 28° 3.00 0.90 4.50 13.60 3.50 1.90 43° 38° 0.077 0.027 0.157 0.441 0.122 0.067 33° 28° 0.531 1.177 Inches Min. Max. 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 0.535 0.138 0.075 43° 38° b2 C c2 a1 N2 N1 F E I A Marking : type number Weight : 20 g A d1 c1 a1 a2 B b1 b2 C c1 c2 E B F I L1 L2 N1 N2 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5 .


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