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TN805-400B Dataheets PDF



Part Number TN805-400B
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Sensitive and standard 8A SCRs
Datasheet TN805-400B DatasheetTN805-400B Datasheet (PDF)

® TN805/TN815-B SCR’s FEATURES ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA DESCRIPTION The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology. K A A G DPAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state curren.

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® TN805/TN815-B SCR’s FEATURES ITRMS = 8 A VDRM = 400 V to 800 V IGT ≤ 5 mA and 15 mA DESCRIPTION The TN805/TN815-B serie of Silicon Controlled Rectifiers uses a high performance TOPGLASS PNPN technology. These parts are intended for general purpose applications using mount technology. K A A G DPAK ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Mean on-state current (180° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C) Tc= 105°C Tc= 105°C tp = 8.3 ms tp = 10 ms I2t dI/dt Tstg Tj Tl I2t Value for fusing Critical rate of rise of on-state current dIG /dt = 1 A/µs. IG = 100 mA Storage junction temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s tp = 10ms Value 8 5 73 70 24.5 100 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C Unit A A A Symbol VDRM VRRM Parameter 400B Repetitive peak-off voltage Tj = 125°C 400 TN805 or TN815 600B 600 700B 700 800B 800 Unit V August 1998 - Ed: 1A 1/5 TN805/TN815-B THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Parameter Junction to ambient (S=0.5cm2) Junction to case for D.C Value 70 2.5 Unit °C/W °C/W GATE CHARACTERISTICS PG (AV)= 1W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs) VRGM = 5 V ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH IL VTM IDRM IRRM dV/dt Test Conditions VD = 12V (DC) RL= 33Ω VD = 12V (DC) RL= 33Ω VD = VDRM RL = 3.3kΩ VD = VDRM IG = 40mA IT= 150mA IG = 1.2 IGT ITM= 16A tp= 380µs VDRM Rated VRRM Rated Linear slope up to VD=67%VDRM Gate open ITM = 3 x IT(AV) dIG/dt = 0.5A/us Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj = 125°C Tj= 125°C Type MAX MAX MIN TYP MAX MAX MAX MAX MAX MIN 50 25 25 1.6 10 2 150 5 1.5 0.2 2 30 30 Value TN805 TN815 15 µA V V µs mA mA V µA mA V/µs Unit ORDERING INFORMATION TN SCR CURRENT 2/5 8 05 - 600 SENSITIVITY B PACKAGES : B: DPAK VDRM / VRRM TN805/815-B Fig. 1: Maximum average power dissipation versus average on-state current . Fig. 2 : Correlation between maximum average power dissipation and maximum allowable temperatures (T amb and T case) for different thermal resistances heatsink+contact. P(W) 8 7 6 5 4 3 2 1 0 0 1 2 IT(av)(A) 3 4 5 α 360° α = 180° α = 120° α = 90° α = 60° α = 30° D.C. P(W) 8 7 6 5 4 Rth=37°C/W Tcase (°C) 105 Rth=0°C/W α = 180° 110 115 120 3 2 1 0 Tamb(°C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 125 6 7 Fig. 3-1: Average and D.C. on-state current versus case temperature. Fig. 3-2: Average and D.C. on-state current versus case temperature. IT(av)(A) 10 D.C. IT(av)(A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 8 6 4 2 Tcase(°C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 α = 180° D.C. α = 180° Tamb(°C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig. 4-1: Relative variation of thermal impedance versus pulse duration. Fig. 4-2: Relative variation of thermal impedance versus pulse duration. K=[Zth(j-c)/Rth(j-c)] 1.0 K=[Zth(j-a)/Rth(j-a)] 1.00 0.5 0.10 0.2 tp(s) 0.1 1E-3 1E-2 1E-1 1E+0 tp(s) 0.01 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/5 TN805/TN815-B Fig. 5: Relative variation of gate trigger current and holding current versus junction temperature. Fig. 6: Non repetitive surge peak on-state current versus number of cycles. Igt,IH[Tj]/Ig,IH[Tj=25°C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 80 Igt ITSM(A) 70 60 50 Tj initial=25°C F=50Hz IH 40 30 20 10 Tj(°C) -20 0 20 40 60 80 100 120 Number of cycles 1 10 100 1000 0 Fig. 7: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp<10ms, and corresponding value of I2t. Fig. 8: On-state characteristics (maximum values). ITSM(A),I²t(A²s) 300 Tj initial=25°C ITSM ITM(A) 100.0 Tj max.: Vto=0.85V Rt=46m 100 50 I²t 10.0 Tj=Tj max. Tj=25°C 1.0 20 tp(ms) 10 1 2 5 10 VTM(V) 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig. 9: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35µm). Rth(j-a) (°C/W) 100 80 60 40 20 S(Cu) (cm²) 0 0 2 4 6 8 10 12 14 16 18 20 4/5 TN805/815-B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0° Millimeters Min. Typ. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.80 1.00 0.023 8° 0° Max 2.40 0.086 1.10 0.035 0.23 0.001 0.90 0.025 5.40 0.204 0.60 0.017 0.60 0.018 6.20 0.236 6.60 0.251 4.60 0.173 10.10 0.368 0.031 0.039 8° Inches Min. Typ. Max. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.259 0.181 0.397 FOOT PRINT DIMENSIONS (in millimeters) 6.7 WEIGHT : 0.30g MARKING TYPE MARKING TN8 05x0 TN8 15x0 6.7 T805- x00B T815-x00B 6.7 3 1.6 2.3 2.3 1.6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsIbility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implica.


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