TN6725A
Discrete Power & Signal Technologies
TN6725A
CB
E
TO-226
NPN Darlington Transistor
This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics.
Absolute Maximum Ratings*
Symbol VCES VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage C...
