TN6717A / NZT6717
Discrete POWER & Signal Technologies
TN6717A
NZT6717
C
E C C
TO-226
BE
B
SOT-223
NPN General P...
TN6717A / NZT6717
Discrete POWER & Signal Technologies
TN6717A
NZT6717
C
E C C
TO-226
BE
B
SOT-223
NPN General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 39.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
80 80 5.0 1.2 -55 to +150
Units
V V V A °C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RθJC RθJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TN6717A 1.0 8.0 50 125
Max
*NZT6717 1.0 8.0 125
Units
W mW/ °C °C/W °C/W
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 1997 Fairchild Semiconductor Corporation
TN6717A / NZT6717
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25°C unless otherwise noted
Test C...