Ordering number :EN5959
NPN Triple Diffused Planar Silicon Transistor
TS7988
Ultrahigh-Definition CRT Display Horizont...
Ordering number :EN5959
NPN Triple Diffused Planar Silicon
Transistor
TS7988
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process.
Package Dimensions
unit:mm 2039D-TO3PML
[TS7988]
ø3.4 16.0 5.6 3.1
5.0 8.0 21.0 22.0
4.0
2.8 2.0
2.0
20.4
1.0
0.6
1
2
3
5.45
5.45
1:Base 2:Collector 3:Emitter SANYO:TO-3PML
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 10 25 3.0 70 150 –55 to +150 Unit V V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICBO ICES IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCE=800V, IE=0 VCE=1600V, RBE=0 800 1.0 15 4 30 7 5 1.5 3.0 0.2 V V µs µs VEB=4V, IC=0 VCE=5V, IC=1.0A VCE=5V, IC=7A IC=7A, IB=1.75A IC=7A, IB=1.75A IC=6A, IB1=1.0A, IB2=–2.5A IC=6A, IB1=1.0A, IB2=–2.5A Conditions Ratings min typ max 10 1.0 Unit µA mA V mA
VCEO(sus) IC=100mA, IB=0
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