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TSHF5200 Dataheets PDF



Part Number TSHF5200
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description High Speed IR Emitting Diode in 5 mm (T-13/4) Package
Datasheet TSHF5200 DatasheetTSHF5200 Datasheet (PDF)

TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. The TSHF5200 emitter is suitable for serial infrared links according to the IrDA–.

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TSHF5200 Vishay Telefunken High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package Description TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. The TSHF5200 emitter is suitable for serial infrared links according to the IrDA–standard. 94 8390 Features D D D D D D D D D High modulation bandwidth (10 MHz) High radiant power Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 10° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors Applications Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz). Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 160 100 –40...+100 –40...+100 260 270 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms t x 5sec, 2 mm from case Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TSHF5200 Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.35 2.4 –1.7 160 100 1000 35 –0.7 ±10 870 40 0.2 30 30 Max 1.6 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns 10 50 fe TKlp tr tf lp Dl www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 81023 Rev. 3, 02-Aug-99 TSHF5200 Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) 180 PV – Power Dissipation ( mW ) 160 140 120 100 80 60 40 20 0 0 16084 104 IF – Forward Current ( mA ) 103 102 101 100 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 94 8880 0 1 2 3 4 VF – Forward Voltage ( V ) Figure 1. Power Dissipation vs. Ambient Temperature 120 IF – Forward Current ( mA ) 100 80 60 40 20 0 0 16085 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel – Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C ) 94 7990 e 0 20 40 60 80 100 Tamb – Ambient Temperature ( °C ) Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 1000 I e – Radiant Intensity ( mW/sr ) 101 I F – Forward Current ( A ) Tamb<57_C tp / T = 0.01, IFSM = 1 A 0.02 100 0.05 0.1 0.2 0.5 10–1 10–2 100 10 1 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102 94 8881 100 16086 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration Figure 6. Radiant Intensity vs. Forward Current Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TSHF5200 Vishay Telefunken 1000 1.25 Fe – Radiant Power ( mW ) Fe – Radiant Power ( mW ) 100 1.0 0.75 0.5 10 1 0.25 0 780 0.1 100 94 8007 e 101 102 103 IF – Forward Current ( mA ) 104 95 9886 l – Wavelength ( nm ) 0° 10 ° 20 ° 30° 880 980 Figure 7. Radiant Power vs. Forward Current 1.6 Figure 9. Relative Radiant Power vs. Wavelength 1.2 I e rel / Fe rel Ie rel – Relative Radiant Intensity 40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 0.4 0 –10 0 10 94 8882 50 100 140 15989 Tamb – Ambient Temperature ( °C ) Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature Figure 10. Relative Radiant Intensity vs. Angular Displacement www.vishay.de • FaxBack +1-408-970-5600 4 (6) Document Number 81023 Rev. 3, 02-Aug-99 TSHF5200 Vishay Telefunken Dimensions in mm 95 10916 Document Number 81023 Rev. 3, 02-Aug-99 www.vishay.de • FaxBack +1-408-970-5600 5 (6) TSHF5200 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and cont.


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