Document
TSHF5200
Vishay Telefunken
High Speed IR Emitting Diode in ø 5 mm (T–1¾) Package
Description
TSHF5200 is a high speed infrared light emitting diode in GaAlAs on GaAlAs double hetero (DH) technology, molded on copper frame, in a clear, untinted plastic package. The new technology combines the high speed of DH– GaAlAs with the efficiency of standard GaAlAs and the low forward voltage of the standard GaAs technology. The TSHF5200 emitter is suitable for serial infrared links according to the IrDA–standard.
94 8390
Features
D D D D D D D D D
High modulation bandwidth (10 MHz) High radiant power Low forward voltage Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 10° Peak wavelength lp = 870 nm High reliability Good spectral matching to Si photodetectors
Applications
Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements. TSHF5200 is ideal for the design of transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK / FSK – coded, 450 kHz or 1.3 MHz).
Absolute Maximum Ratings
Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.5 160 100 –40...+100 –40...+100 260 270 Unit V mA mA A mW °C °C °C °C K/W
tp/T = 0.5, tp = 100 ms tp = 100 ms
t
x 5sec, 2 mm from case
Document Number 81023 Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of lp Rise Time Fall Time Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 ms IF = 100 mA, tp = 20 ms IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF TKVF IR Cj Ie Ie TKfe ϕ Min Typ 1.35 2.4 –1.7 160 100 1000 35 –0.7 ±10 870 40 0.2 30 30 Max 1.6 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns
10 50
fe
TKlp tr tf
lp Dl
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Document Number 81023 Rev. 3, 02-Aug-99
TSHF5200
Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified)
180 PV – Power Dissipation ( mW ) 160 140 120 100 80 60 40 20 0 0
16084
104 IF – Forward Current ( mA )
103
102
101
100 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C )
94 8880
0
1
2
3
4
VF – Forward Voltage ( V )
Figure 1. Power Dissipation vs. Ambient Temperature
120 IF – Forward Current ( mA ) 100 80 60 40 20 0 0
16085
Figure 4. Forward Current vs. Forward Voltage
1.2 V Frel – Relative Forward Voltage 1.1 IF = 10 mA 1.0 0.9
0.8 0.7
10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature ( °C )
94 7990 e
0
20
40
60
80
100
Tamb – Ambient Temperature ( °C )
Figure 2. Forward Current vs. Ambient Temperature
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1000 I e – Radiant Intensity ( mW/sr )
101 I F – Forward Current ( A )
Tamb<57_C
tp / T = 0.01, IFSM = 1 A 0.02 100 0.05 0.1 0.2 0.5 10–1 10–2
100
10
1
0.1 10–1 100 101 tp – Pulse Duration ( ms ) 102
94 8881
100
16086
101 102 103 IF – Forward Current ( mA )
104
Figure 3. Pulse Forward Current vs. Pulse Duration
Figure 6. Radiant Intensity vs. Forward Current
Document Number 81023 Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken
1000 1.25
Fe – Radiant Power ( mW )
Fe – Radiant Power ( mW )
100
1.0
0.75 0.5
10
1
0.25 0 780
0.1 100
94 8007 e
101 102 103 IF – Forward Current ( mA )
104
95 9886
l – Wavelength ( nm )
0° 10 ° 20 ° 30°
880
980
Figure 7. Radiant Power vs. Forward Current
1.6
Figure 9. Relative Radiant Power vs. Wavelength
1.2 I e rel / Fe rel
Ie rel – Relative Radiant Intensity
40° 1.0 0.9 0.8 0.7 50° 60° 70° 80° 0.6 0.4 0.2 0 0.2 0.4 0.6
0.8
0.4
0 –10 0 10
94 8882
50
100
140
15989
Tamb – Ambient Temperature ( °C )
Figure 8. Rel. Radiant Intensity\Power vs. Ambient Temperature
Figure 10. Relative Radiant Intensity vs. Angular Displacement
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Document Number 81023 Rev. 3, 02-Aug-99
TSHF5200
Vishay Telefunken Dimensions in mm
95 10916
Document Number 81023 Rev. 3, 02-Aug-99
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TSHF5200
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and cont.