Infrared Emitting Diode
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
...
Description
TSHA6200, TSHA6201, TSHA6202, TSHA6203
www.vishay.com
Vishay Semiconductors
Infrared Emitting Diode, 875 nm, GaAlAs
94 8389
DESCRIPTION The TSHA620. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package.
FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5 Peak wavelength: λp = 875 nm High reliability Angle of half intensity: ϕ = ± 12° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS Infrared remote control and free air data transmission
systems This emitter series is dedicated to systems with panes in
transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass
PRODUCT SUMMARY
COMPONENT TSHA6200 TSHA6201 TSHA6202 TSHA6203
Ie (mW/sr) 40 50 60 65
Note Test conditions see table “Basic Characteristics“
ϕ (deg) ± 12 ± 12 ± 12 ± 12
λp (nm) 875 875 875 875
tr (ns) 600 600 600 600
ORDERING INFORMATION
ORDERING CODE TSHA6200 TSHA6201 TSHA6202 TSHA6203
Note MOQ: minimum order quantity
PACKAGING Bulk Bulk Bulk Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾ T-1¾ T-1¾ T-1¾
Rev. 1.9, 24-Aug-11
...
Similar Datasheet