TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
l Average For...
Description
U1BC44,U1GC44,U1JC44
TOSHIBA RECTIFIER SILICON DIFFUSED JUNCTION TYPE
U1BC44,U1GC44,U1JC44
FOR HYBRID USE
l Average Forward Current l Repetitive Peak Reverse Voltage l Mini Plastic Mold Package : IF (AV) = 1.0A : VRRM = 100, 400, 600V Unit: mm
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC U1BC44 Repetitive Peak Reverse Voltage U1GC44 U1JC44 Average Forward Current On Ceramic Substrate On Glass−epoxy Substrate IF (AV) VRRM SYMBOL RATING 100 400 600 1.0 (Ta = 75°C) 0.9 (Ta = 25°C) 30 (50Hz) 33 (60Hz) −40~150 −40~150 V UNIT
A
Peak One Cycle Surge Forward Current (Non−Repetitive) Junction Temperature Storage Temperature Range
IFSM Tj Tstg
A °C °C
JEDEC JEITA TOSHIBA Weight: 0.06g
― ― 3−4D1A
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC Peak Forward Voltage Repetitive Peak Reverse Current Thermal Resistance SYMBOL VFM IRRM Rth (j−a) TEST CONDITION IFM = 1.0A VRRM = Rated DC On ceramic substrate On glass-epoxy substrate MIN ― ― ― ― TYP. ― ― ― ― MAX 1.2 10 60 120 UNIT V µA °C / W
STANDARD SOLDERING PAD
1
2001-07-18
U1BC44,U1GC44,U1JC44
2
2001-07-18
U1BC44,U1GC44,U1JC44
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in ma...
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