Document
TZQ5221B...TZQ5267B
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D D D D D
Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise
96 12009
Applications
Voltage stabilization
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W
x
Type
Symbol PV IZ Tj Tstg
Value 500 PV/VZ 175 –65...+175
Unit mW mA °C °C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85612 Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600 1 (6)
TZQ5221B...TZQ5267B
Vishay Telefunken
Type TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5227B TZQ5228B TZQ5229B TZQ5230B TZQ5231B TZQ5232B TZQ5233B TZQ5234B TZQ5235B TZQ5236B TZQ5237B TZQ5238B TZQ5239B TZQ5240B TZQ5241B TZQ5242B TZQ5243B TZQ5244B TZQ5245B TZQ5246B TZQ5247B TZQ5248B TZQ5249B TZQ5250B TZQ5251B TZQ5252B TZQ5253B TZQ5254B TZQ5255B TZQ5256B TZQ5257B TZQ5258B TZQ5259B TZQ5260B TZQ5261B TZQ5262B TZQ5263B TZQ5264B TZQ5265B TZQ5266B TZQ5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT for rzjT mA W 20 < 30 20 < 30 20 < 30 20 < 30 20 < 29 20 < 28 20 < 24 20 < 23 20 < 22 20 < 19 20 < 17 20 < 11 20 <7 20 <7 20 <5 20 <6 20 <8 20 <8 20 < 10 20 < 17 20 < 22 20 < 30 9.5 < 13 9.0 < 15 8.5 < 16 7.8 < 17 7.4 < 19 7.0 < 21 6.6 < 23 6.2 < 25 5.6 < 29 5.2 < 33 5.0 < 35 4.6 < 41 4.5 < 44 4.2 < 49 3.8 < 58 3.4 < 70 3.2 < 80 3.0 < 93 2.7 < 105 2.5 < 125 2.2 < 150 2.1 < 170 2.0 < 185 1.8 < 230 1.7 < 270 rzjk at IZK mA < 1200 0.25 < 1250 0.25 < 1300 0.25 < 1400 0.25 < 1600 0.25 < 1600 0.25 < 1700 0.25 < 1900 0.25 < 2000 0.25 < 1900 0.25 < 1600 0.25 < 1600 0.25 < 1600 0.25 < 1000 0.25 < 750 0.25 < 500 0.25 < 500 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 700 0.25 < 700 0.25 < 800 0.25 < 900 0.25 < 1000 0.25 < 1100 0.25 < 1300 0.25 < 1400 0.25 < 1400 0.25 < 1600 0.25 < 1700 0.25 IR at VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 TKVZ %/K < –0.085 < –0.085 < –0.080 < –0.080 < –0.075 < –0.070 < –0.065 < –0.060 < ±0.055 < ±0.030 < ±0.030 < +0.038 < +0.038 < +0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 < +0.076 < +0.077 < +0.079 < +0.082 < +0.082 < +0.083 < +0.084 < +0.085 < +0.086 < +0.086 < +0.087 < +0.088 < +0.089 < +0.090 < +0.091 < +0.091 < +0.092 < +0.093 < +0.094 < +0.095 < +0.095 < +0.096 < +0.096 < +0.097 < +0.097 < +0.097 < +0.098
W
mA
< 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1
1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30°C ± 2°C.
www.vishay.de • FaxBack +1-408-970-5600 2 (6)
Document Number 85612 Rev. 3, 01-Apr-99
TZQ5221B...TZQ5267B
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 600 Ptot – Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
15
10
5 IZ=5mA 0
–5 0 10 20 30 40 50 VZ – Z-Voltage ( V )
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
95 9600
Figure 1. Total Power Dissipation vs. Ambient Temperature
1000 C D – Diode Capacitance ( pF ) – Voltage Change ( mV )
Figure 4. Temperature Coefficient of Vz vs. Z–Voltage
200
Tj = 25°C 100
150 VR = 2V 100 Tj = 25°C
IZ=5mA 10
DVZ
50
1 0
95 9598
0 5 10 15 20 25
95 9601
0
5
10
15
20
25
VZ – Z-Voltage ( V )
VZ – Z-Voltage ( V )
Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C
1.3 VZtn – Relative Voltage Change VZtn=VZt/VZ(25°C) IF – Forward Current ( mA ) 1.2
TKVZ=10 10–4/K 8 6 10–4/K 10–4/K 10–4/K 10–4/K
Figure 5. Diode Capacitance vs. Z–Voltage
100
10 Tj = 25°C 1
1.1
4 2
1.0 0.9 0.8 –60
0 –2 10–4/K –4 10–4/K
0.1 0.01 0.001
0
60
120
180
240
95 9605
0
0.2
0.4
0.6
0.8
1.0
95 9599
Tj – Junction Temperature ( °C )
VF – Forward Voltage ( V )
Figure 3. Typical Change of Working Voltage vs. Junction Temperature
Figure 6. Forward Current vs. Forward Voltage
Document Number 85612 Rev. 3, 01-Apr-99
www.vishay.de • FaxBack +1-408-970-5600 3 (6)
TZQ5221B...TZQ5267B
Vishay Telefunken
100 r Z – Differential Z-Resistance ( W ) 1000
IZ – Z-Current ( mA )
80 Ptot=500mW Tamb=25°C 60
IZ=1mA.