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TZQ5262B Dataheets PDF



Part Number TZQ5262B
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description Silicon Epitaxial Planar Z-Diodes
Datasheet TZQ5262B DatasheetTZQ5262B Datasheet (PDF)

TZQ5221B...TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximu.

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TZQ5221B...TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z–Diodes Features D D D D D Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise 96 12009 Applications Voltage stabilization Absolute Maximum Ratings Tj = 25_C Parameter Power dissipation Z–current Junction temperature Storage temperature range Test Conditions RthJA 300K/W x Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 –65...+175 Unit mW mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (6) TZQ5221B...TZQ5267B Vishay Telefunken Type TZQ5221B TZQ5222B TZQ5223B TZQ5224B TZQ5225B TZQ5226B TZQ5227B TZQ5228B TZQ5229B TZQ5230B TZQ5231B TZQ5232B TZQ5233B TZQ5234B TZQ5235B TZQ5236B TZQ5237B TZQ5238B TZQ5239B TZQ5240B TZQ5241B TZQ5242B TZQ5243B TZQ5244B TZQ5245B TZQ5246B TZQ5247B TZQ5248B TZQ5249B TZQ5250B TZQ5251B TZQ5252B TZQ5253B TZQ5254B TZQ5255B TZQ5256B TZQ5257B TZQ5258B TZQ5259B TZQ5260B TZQ5261B TZQ5262B TZQ5263B TZQ5264B TZQ5265B TZQ5266B TZQ5267B VZnom 1) V 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10 11 12 13 14 15 16 17 18 19 20 22 24 25 27 28 30 33 36 39 43 47 51 56 60 62 68 75 IZT for rzjT mA W 20 < 30 20 < 30 20 < 30 20 < 30 20 < 29 20 < 28 20 < 24 20 < 23 20 < 22 20 < 19 20 < 17 20 < 11 20 <7 20 <7 20 <5 20 <6 20 <8 20 <8 20 < 10 20 < 17 20 < 22 20 < 30 9.5 < 13 9.0 < 15 8.5 < 16 7.8 < 17 7.4 < 19 7.0 < 21 6.6 < 23 6.2 < 25 5.6 < 29 5.2 < 33 5.0 < 35 4.6 < 41 4.5 < 44 4.2 < 49 3.8 < 58 3.4 < 70 3.2 < 80 3.0 < 93 2.7 < 105 2.5 < 125 2.2 < 150 2.1 < 170 2.0 < 185 1.8 < 230 1.7 < 270 rzjk at IZK mA < 1200 0.25 < 1250 0.25 < 1300 0.25 < 1400 0.25 < 1600 0.25 < 1600 0.25 < 1700 0.25 < 1900 0.25 < 2000 0.25 < 1900 0.25 < 1600 0.25 < 1600 0.25 < 1600 0.25 < 1000 0.25 < 750 0.25 < 500 0.25 < 500 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 600 0.25 < 700 0.25 < 700 0.25 < 800 0.25 < 900 0.25 < 1000 0.25 < 1100 0.25 < 1300 0.25 < 1400 0.25 < 1400 0.25 < 1600 0.25 < 1700 0.25 IR at VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4 9.1 9.9 10 11 12 13 14 14 15 17 18 19 21 21 23 25 27 30 33 36 39 43 46 47 52 56 TKVZ %/K < –0.085 < –0.085 < –0.080 < –0.080 < –0.075 < –0.070 < –0.065 < –0.060 < ±0.055 < ±0.030 < ±0.030 < +0.038 < +0.038 < +0.045 < +0.050 < +0.058 < +0.062 < +0.065 < +0.068 < +0.075 < +0.076 < +0.077 < +0.079 < +0.082 < +0.082 < +0.083 < +0.084 < +0.085 < +0.086 < +0.086 < +0.087 < +0.088 < +0.089 < +0.090 < +0.091 < +0.091 < +0.092 < +0.093 < +0.094 < +0.095 < +0.095 < +0.096 < +0.096 < +0.097 < +0.097 < +0.097 < +0.098 W mA < 100 < 100 < 75 < 75 < 50 < 25 < 15 < 10 <5 <5 <5 <5 <5 <5 <3 <3 <3 <3 <3 <3 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 1.)Based on dc measurement at thermal equilibrium; case temperature maintained at 30°C ± 2°C. www.vishay.de • FaxBack +1-408-970-5600 2 (6) Document Number 85612 Rev. 3, 01-Apr-99 TZQ5221B...TZQ5267B Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) TK VZ – Temperature Coefficient of VZ ( 10 –4 /K ) 600 Ptot – Total Power Dissipation ( mW ) 500 400 300 200 100 0 0 95 9602 15 10 5 IZ=5mA 0 –5 0 10 20 30 40 50 VZ – Z-Voltage ( V ) 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 95 9600 Figure 1. Total Power Dissipation vs. Ambient Temperature 1000 C D – Diode Capacitance ( pF ) – Voltage Change ( mV ) Figure 4. Temperature Coefficient of Vz vs. Z–Voltage 200 Tj = 25°C 100 150 VR = 2V 100 Tj = 25°C IZ=5mA 10 DVZ 50 1 0 95 9598 0 5 10 15 20 25 95 9601 0 5 10 15 20 25 VZ – Z-Voltage ( V ) VZ – Z-Voltage ( V ) Figure 2. Typical Change of Working Voltage under Operating Conditions at Tamb=25°C 1.3 VZtn – Relative Voltage Change VZtn=VZt/VZ(25°C) IF – Forward Current ( mA ) 1.2 TKVZ=10 10–4/K 8 6 10–4/K 10–4/K 10–4/K 10–4/K Figure 5. Diode Capacitance vs. Z–Voltage 100 10 Tj = 25°C 1 1.1 4 2 1.0 0.9 0.8 –60 0 –2 10–4/K –4 10–4/K 0.1 0.01 0.001 0 60 120 180 240 95 9605 0 0.2 0.4 0.6 0.8 1.0 95 9599 Tj – Junction Temperature ( °C ) VF – Forward Voltage ( V ) Figure 3. Typical Change of Working Voltage vs. Junction Temperature Figure 6. Forward Current vs. Forward Voltage Document Number 85612 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (6) TZQ5221B...TZQ5267B Vishay Telefunken 100 r Z – Differential Z-Resistance ( W ) 1000 IZ – Z-Current ( mA ) 80 Ptot=500mW Tamb=25°C 60 IZ=1mA.


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