TXDV812

Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42.5 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TXDVxx12 series uses a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TXDV812RG Blocking voltage VDRM/VRRM On-state current IT(RMS) Gate current IGT 800 V TXDVxx12 12 A high voltage Triacs A2 G A1 A1 A2 G TO-220AB insulated 12 A 100 mA TXDV1212RG 1200 V January 2012 Doc ID 18272 Rev 2 1/7 www.st.com 7 Characteristics 1 Characteristics TXDVxx12 Table 2. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) VDRM VRRM On-state rms current (180° conduction angle) Repetitive peak off-state voltage TXDV812 TXDV1212 tp = 2.5 ms ITSM Non repetitive surge peak on-state current tp = 8.3 ms I2t I2t value for fusing tp = 10 ms tp = 10 ms dI/dt Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs F = 50 Hz Tstg Storage junction temperature range Tj Operating junction temperature range VINS(RMS)(...