ALTERNISTORS
TXDV 408 ---> 808
ALTERNISTORS
. . .
FEATURES VERY HIGH COMMUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS...
Description
TXDV 408 ---> 808
ALTERNISTORS
. . .
FEATURES VERY HIGH COMMUTATION : > 28 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dV/dt : 500 V/µs min
DESCRIPTION The TXDV 408 ---> 808 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter
A1 A2
G
TO220AB (Plastic)
Value Tc = 90 °C 8
Unit A
ITSM
tp = 2.5 ms tp = 8.3 ms tp = 10 ms
115 85 80 32 20 100 - 40 to + 150 - 40 to + 125 260
A
I2t dI/dt
I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs
tp = 10 ms Repetitive F = 50 Hz Non Repetitive
A2s A/µs
Tstg Tj Tl
Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case
°C °C °C
Symbol
Parameter 408
TXDV 608 600 808 800
Unit
VDRM VRRM March 1995
Repetitive peak off-state voltage Tj = 125 °C
400
V
1/5
TXDV 408 ---> 808
THERMAL RESISTANCES
Symbol Rth (j-a) Junction to ambient Parameter Value 60 4 3 Unit °C/W °C/W °C/W
Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IGM = 4A ...
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