ALTERNISTORS
TXDV 412 ---> 812
ALTERNISTORS
. . .
FEATURES VERY HIGH COMMUTATION : > 42.5 A/ms (400Hz) INSULATING VOLTAGE = 2500V(R...
Description
TXDV 412 ---> 812
ALTERNISTORS
. . .
FEATURES VERY HIGH COMMUTATION : > 42.5 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) dV/dt : 500 V/µs min
DESCRIPTION The TXDV 412 ---> 812 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values)
Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter
A1 A2
G
TO220AB (Plastic)
Value Tc = 90 °C 12
Unit A
ITSM
tp = 2.5 ms tp = 8.3 ms tp = 10 ms
170 125 120 72 20 100 - 40 to + 150 - 40 to + 125 260
A
I2t dI/dt
I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs
tp = 10 ms Repetitive F = 50 Hz Non Repetitive
A2s A/µs
Tstg Tj Tl
Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case
°C °C °C
Symbol
Parameter
412 Repetitive peak off-state voltage Tj = 125 °C 400
TXDV 612 600 812 800
Unit
VDRM VRRM March 1995
V
1/5
TXDV 412 ---> 812
THERMAL RESISTANCES
Symbol Rth (j-a) Junction to ambient Parameter Value 60 2.5 1.9 Unit °C/W °C/W °C/W
Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360° conduction angle ( F= 50 Hz)
GATE CHARACTERISTICS (maximum values)
PG (AV) = 1W PGM = 10W (tp = 20 µs) IG...
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